Medium power NPN transistor JTD JTDMMBT5551 for switching and amplification in compact surface mount

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Product Description

MMBT5551 TRANSISTOR (NPN)

The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It features a complementary design to the MMST5401 and comes in a small surface mount package.

Product Attributes

Brand: JTD
Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
Material: Plastic-Encapsulate

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				180	V
Collector-Emitter Voltage	VCEO				160	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				600	mA
Collector Power Dissipation	PC	Ta=25			200	mW
Thermal Resistance Junction To Ambient	RJA			625	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	180			V
Collector-emitter breakdown voltage	V(BR)CEO*	IC=1mA, IB=0	160			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector cut-off current	ICBO	VCB=120V, IE=0			50	nA
Emitter cut-off current	IEBO	VEB=4V, IC=0			50	nA
DC current gain	hFE	VCE=5V, IC=1mA	80
		VCE=5V, IC=10mA		100	300
		VCE=5V, IC=50mA	30
Collector-emitter saturation voltage	VCE(sat)	IC=50mA, IB=5mA		0.2		V
Collector-emitter saturation voltage	VCE(sat)	IC=10mA, IB=1mA		0.15		V
Base-emitter saturation voltage	VBE(sat)	IC=50mA, IB=5mA		1		V
Base-emitter saturation voltage	VBE(sat)	IC=10mA, IB=1mA		1		V
Transition frequency	fT	VCE=10V,IC=10mA , f=100MHz	100		300	MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz			6	pF