SOT23 Package NPN Transistor Collector Current 0.1A JTD JTD2SC1623W Suitable for Electronic Circuits

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Product Description

Product Overview

The 2SC1623W is a SOT-23 plastic-encapsulated NPN transistor from SHENZHEN JTD ELECTRONICS CO.,LTD. It features a collector current of 0.1A and is complementary to the 2SA812 transistor. This transistor is suitable for various electronic applications requiring amplification and switching.

Product Attributes

Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
Origin: Shenzhen
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 1mA, IB=0	50			V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100A, IC=0	6			V
Collector cut-off current	ICBO	VCB= 60 V , IE=0			0.1	A
Collector cut-off current	ICEO	VCE= 50V , IB=0			0.1	A
Emitter cut-off current	IEBO	VEB= 6V , IC=0			0.1	A
DC current gain	hFE	VCE=6V, IC= 1mA	200		1000
DC current gain	hFE	VCE=6V, IC=10mA	100
Collector-emitter saturation voltage	VCE(sat)	IC=100 mA, IB=10mA		0.3		V
Base-emitter saturation voltage	VBE(sat)	IC=100 mA, IB=10mA		1.3		V
Transition frequency	fT	VCE=6V, IC= 20mA f=30MHz		150		MHz

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	60	V
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	6	V
Collector Current	IC	100	mA
Collector Power Dissipation	PC	450	mW
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55+150