High DC current gain dual PNP transistor JTD JTDMMDT3906DW suitable for electronic circuit switching
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Product Description
Product Overview
The MMDT3906DW is an epitaxial planar die construction dual PNP transistor designed for low power amplification and switching applications. It features high DC current gain and fast switching speeds, making it suitable for various electronic circuits.
Product Attributes
- Brand: JTD ELECTRONICS
- Origin: SHENZHEN
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Continuous Collector Current | IC | -0.2 | A | |||
| Collector Power Dissipation | PC | Ta=25 | 0.2 | W | ||
| Junction to Ambient Air Thermal Resistance | RJA | 625 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICEX | VCE=-30V,VEB(OFF)=-3V | -50 | nA | ||
| Base cut-off current | IEBO | VEB=-5V,IC=0 | -50 | nA | ||
| DC current gain | hFE(1) | VCE=-1V,IC=-0.1mA | 60 | |||
| hFE(2) | VCE=-1V,IC=-1mA | 80 | ||||
| hFE(3) | VCE=-1V,IC=-10mA | 100 | 300 | |||
| hFE(4) | VCE=-1V,IC=-50mA | 60 | ||||
| hFE(5) | VCE=-1V,IC=-100mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-10mA,IB=-1mA | -0.25 | V | ||
| VCE(sat)2 | IC=-50mA,IB=-5mA | -0.4 | V | |||
| Base-emitter saturation voltage | VBE(sat)1 | IC=-10mA,IB=-1mA | -0.65 | -0.85 | V | |
| VBE(sat)2 | IC=-50mA,IB=-5mA | -0.95 | V | |||
| Transition frequency | fT | VCE=-20V,IC=-10mA,f=100MHz | 250 | MHz | ||
| Collector output capacitance | Cob | VCB=-5V,IE=0,f=1MHz | 4.5 | pF | ||
| Noise figure | NF | VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1K | 4 | dB | ||
| Delay time | td | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| Rise time | tr | VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA | 35 | nS | ||
| Storage time | tS | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 225 | nS | ||
| Fall time | tf | VCC=-3V, IC=-10mA IB1=-IB2=- 1mA | 75 | nS |
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