High Voltage PNP Transistor JUXING MMBT2907A Compatible with Multiple Electronic Device Requirements
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Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
MMBT2907A TRANSISTOR (PNP)
The MMBT2907A is an epitaxial planar die construction PNP transistor. It offers a complementary NPN type (MMBT2222A) and is suitable for various electronic applications requiring PNP transistor functionality.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -60 | V | |||
| Collector-Emitter Voltage | VCEO | -60 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current - Continuous | IC | -600 | mA | |||
| Total Device Dissipation | PD | (Ta=25) | 250 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 500 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A,IE=0 | -60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO* | IC=-10mA,IB=0 | -60 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-50V,IE=0 | -20 | nA | ||
| Base cut-off current | IEBO | V EB=-3V, IC =0 | -10 | nA | ||
| Collector cut-off current | ICEX | VCE=-30 V, VBE(off) =-0.5V | -50 | nA | ||
| DC current gain | hFE(1) | VCE=-10V,IC=-150mA | 100 | 300 | ||
| DC current gain | hFE(2) | VCE=-10V,IC=-0.1mA | 75 | |||
| DC current gain | hFE(3) | VCE=-10V,IC=-1mA | 100 | |||
| DC current gain | hFE(4) | VCE=-10V,IC=-10mA | 100 | |||
| DC current gain | hFE(5) | VCE=-10V,IC=-500mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat)* | IC=-150mA,IB=-15mA | -0.4 | V | ||
| Collector-emitter saturation voltage | VCE(sat)* | IC=-500mA,IB=-50mA | -1.6 | V | ||
| Base-emitter saturation voltage | VBE(sat)* | IC=-150mA,IB=-15mA | -1.3 | V | ||
| Base-emitter saturation voltage | VBE(sat)* | IC=-500mA,IB=-50mA | -2.6 | V | ||
| Transition frequency | fT | VCE=-20V,IC=-50mA,f=100MHz | 200 | MHz | ||
| Delay time | td | 10 | ns | |||
| Rise time | tr | VCE=-30V,IC=-150mA,B1=-15mA | 25 | ns | ||
| Storage time | tS | 225 | ns | |||
| Fall time | tf | VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA | 60 | ns |
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