Durable P Channel MOSFET JSMSEMI FDMA905P designed for low gate voltage operation and load switching
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Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Description
The FDMA905P is an Enhancement Mode P-Channel Power MOSFET utilizing advanced trench technology. This technology provides excellent RDS(ON), low gate charge, and allows operation with low gate voltages. It is ideally suited for load switching applications and a wide variety of other uses, including PWM applications and battery charging in cellular handsets.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: FDMA905P
- Package: DFN2X2-6L
- Technology: Advanced trench MOSFET process
- Channel Type: P-Channel
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -12 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V,VGS=0V | - | - | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS=8V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -0.4 | -0.7 | -1 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-6.7A | - | 12 | 18 | m |
| VGS=-2.5V, ID=-6.2A | - | 14 | 22 | m | ||
| Forward Transconductance | gFS | VDS=-10V,ID=-6.7A | - | 40 | - | S |
| Input Capacitance | Clss | - | 2700 | - | PF | |
| Output Capacitance | Coss | - | 680 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V, F=1.0MHz | - | 590 | - | PF |
| Turn-on Delay Time | td(on) | VDD=-10V,ID=-1A, VGS=-4.5V,RGEN=10 | - | 11 | - | nS |
| Turn-on Rise Time | tr | VDD=-10V,ID=-1A, VGS=-4.5V,RGEN=10 | - | 35 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=-10V,ID=-1A, VGS=-4.5V,RGEN=10 | - | 30 | - | nS |
| Turn-Off Fall Time | tf | VDD=-10V,ID=-1A, VGS=-4.5V,RGEN=10 | - | 10 | - | nS |
| Total Gate Charge | Qg | VDS=-6V,ID=-10A, VGS=-4.5V | - | 35 | 48 | nC |
| Gate-Source Charge | Qgs | VDS=-6V,ID=-10A, VGS=-4.5V | - | 5 | - | nC |
| Gate-Drain Charge | Qg | VDS=-6V,ID=-10A, VGS=-4.5V | - | 10 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=-8A | - | - | -1.2 | V |
| Drain-Source Voltage | VDS | -12 | - | - | V | |
| Gate-Source Voltage | VGS | - | 8 | - | V | |
| Drain Current-Continuous | ID | - | -16 | - | A | |
| Drain Current -Pulsed | IDM | - | -65 | - | A | |
| Maximum Power Dissipation | PD | - | 2.5 | - | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note 2 | - | 50 | - | /W |
| Thermal Resistance,Junction-to-Case | RJC | Note 2 | - | 6.9 | - | /W |
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