Medium Power Amplification and Switching Transistor JTD JTDMMDT5551 Dual NPN Plastic Encapsulate Type

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

Dual NPN Epitaxial Planar Die Construction Transistor. Features complementary PNP type (MMDT5401) and is ideal for medium power amplification and switching applications.

Product Attributes

Brand: JTD
Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
Material: Plastic-Encapsulate Transistors
Website: www.szjtdsemi.com
Revision: Rev-1.0

Technical Specifications

Parameter	Symbol	Min	Max	Unit	Conditions
Collector-Emitter Breakdown Voltage	V(BR)CEO		160	V	IC=1mA , IB=0
Collector-Base Breakdown Voltage	V(BR)CBO		180	V	IC=100 A,IE=0
Emitter-Base Breakdown Voltage	V(BR)EBO		6	V	IE=10 A, IC=0
Collector Cut-off Current	ICBO		0.05	A	VCB=120V, IE=0
Emitter Cut-off Current	IEBO		0.05	A	VEB=4V, IC=0
DC Current Gain	hFE	80	300		VCE=5 V, IC=1mA
DC Current Gain	hFE	100			VCE=5 V, IC=10mA
DC Current Gain	hFE	30			VCE=5 V, IC=50mA
Collector-Emitter Saturation Voltage	VCE(sat)		0.15	V	IC=10mA, IB=1mA
Collector-Emitter Saturation Voltage	VCE(sat)		0.2	V	IC=50mA, IB=5mA
Base-Emitter Saturation Voltage	VBE(sat)		1	V	IC=10mA, IB=1mA
Base-Emitter Saturation Voltage	VBE(sat)		1	V	IC=50mA, IB=5mA
Transition Frequency	fT	100	300	MHz	VCE=10V, IC=10mA,f=100MHz
Output Capacitance	Cob		6	pF	VCB=10V, IE=0, f=1MHz
Noise Figure	NF		8	dB	VCE=5V, IC=0.2mA, RS=1K ,f =1kHz
Collector Current -Continuous	IC		0.2	A
Collector Power Dissipation	PC		0.2	W
Junction Temperature	Tj		150
Storage Temperature	Tstg	-55	150