Dual transistor JTD JTDMMDT5401DW designed for medium power switching and amplification applications

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Product Description

Product Overview

The MMDT5401DW is a Dual Transistor (PNP+PNP) featuring Epitaxial Planar Die Construction. It is ideal for medium power amplification and switching applications. A complementary NPN type (MMDT5401DW) is also available.

Product Attributes

Brand: JTD
Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
Package: SOT-363

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=-100A , IE=0			-160	V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA , IB=0			-150	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A, IC=0			-5	V
Collector cut-off current	ICBO	VCB=-120 V , IE=0			-0.05	A
Emitter cut-off current	IEBO	VEB=-3V , IC=0			-0.05	A
DC current gain	hFE(1)	VCE=-5 V, IC= -1mA	50
DC current gain	hFE(2)	VCE=-5 V, IC= -10mA		100	300
DC current gain	hFE(3)	VCE=-5 V, IC= -50mA	50
Collector-emitter saturation voltage	VCE(sat)1	IC=-10 mA, IB=-1mA		-0.2		V
Collector-emitter saturation voltage	VCE(sat)2	IC=-50 mA, IB=-5mA		-0.5		V
Base-emitter saturation voltage	VBE(sat)1	IC= -10 mA, IB=-1mA		-1		V
Base-emitter saturation voltage	VBE(sat)2	IC= -50 mA, IB=-5mA		-1		V
Transition frequency	fT	VCE= -10V, IC= -10mA,f = 100MHz		100		MHz
Output Capacitance	Cob	VCB=-10V, IE= 0,f=1MHz		6		pF
Noise Figure	NF	VCE= -5.0V, IC= -200A, RS= 10,f = 1.0kHz		8.0		dB
Collector-Base Voltage	VCBO				-160	V
Collector-Emitter Voltage	VCEO				-150	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current -Continuous	IC				-0.2	A
Collector Power Dissipation	PC				0.2	W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150