Electronic Dual PNP Transistor JTD JTDBC857BDW SOT363 Package Ideal for Space Saving Circuit Designs

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Product Description

Product Overview

This SOT-363 package contains two PNP transistors, offering a dual transistor configuration. It is designed to reduce component count and board space without mutual interference between the transistors. Suitable for various electronic applications requiring dual PNP functionality.

Product Attributes

Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
Origin: China
Model: JTDBC857BDW
Marking: 3F

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit	Model
Collector-base breakdown voltage	V(BR)CBO	Ic=-10A,IE=0			-50	V	JTDBC857BDW
Collector-emitter breakdown voltage	V(BR)CEO	Ic=-10mA,IB=0			-45	V	JTDBC857BDW
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A,IC=0			-5	V	JTDBC857BDW
Collector cut-off current	ICBO	VCB=-30V,IE=0			-15	nA	JTDBC857BDW
DC current gain	hFE	VCE=-5V,IC=-2mA	125		630		JTDBC857BDW
Collector-emitter saturation voltage	VCE(sat)(1)	IC=-10mA,IB=-0.5mA		-0.3		V	JTDBC857BDW
Collector-emitter saturation voltage	VCE(sat)(2)	IC=-100mA,IB=-5mA		-0.65		V	JTDBC857BDW
Base-emitter voltage	VBE(1)	VCE=-5V,IC=-2mA	-0.6		-0.75	V	JTDBC857BDW
Base-emitter voltage	VBE(2)	VCE=-5V,IC=-10mA		-0.82		V	JTDBC857BDW
Transition frequency	fT	VCE=-5V,IC=-10mA,f=100MHz		200		MHz	JTDBC857BDW
Collector output capacitance	Cob	VCB=-10V,IE=0,f=1MHz			3.5	pF	JTDBC857BDW
Noise figure	NF	VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz		2.5		dB	JTDBC857BDW
Collector Power Dissipation	PC				0.3	W	JTDBC857BDW
Thermal Resistance Junction to Ambient	RJA			417		/W	JTDBC857BDW
Junction Temperature	TJ				150		JTDBC857BDW
Storage Temperature	Tstg		-55		150		JTDBC857BDW