Small Surface Mount PNP Bipolar Junction Transistor JTD JTDS9015W with High DC Current Gain Features

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Product Description

S9015W Transistor (PNP)

The S9015W is a PNP bipolar junction transistor (BJT) designed for small surface mount applications. It offers high DC current gain, making it suitable for various amplification and switching tasks in electronic circuits.

Product Attributes

Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
Origin: China
Package Type: SOT-323
Marking: M6

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS
Collector-Base Voltage	VCBO	(Ta=25 unless otherwise noted)			-50	V
Collector-Emitter Voltage	VCEO	(Ta=25 unless otherwise noted)			-45	V
Emitter-Base Voltage	VEBO	(Ta=25 unless otherwise noted)			-5	V
Collector Current	IC	(Ta=25 unless otherwise noted)			-100	mA
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			200	mW
Thermal Resistance Junction To Ambient	RJA	(Ta=25 unless otherwise noted)		625	/W
Operation Junction and Storage Temperature Range	TJ,Tstg	(Ta=25 unless otherwise noted)	-55		+150
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-100A, IB=0	-45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0	-5			V
Collector cut-off current	ICBO	VCB=-50V, IE=0			-100	nA
Emitter cut-off current	IEBO	VEB=-5V, IC=0			-100	nA
DC current gain	hFE	VCE=-5V, IC=-1mA	200		1000
Collector-emitter saturation voltage	VCE(sat)	IC=-100mA, IB=-10mA			-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=-100mA, IB=-10mA			-1	V
Base-emitter voltage	VBE	VCE=-5V, IC=-1mA	-0.6		-0.75	V
Transition frequency	fT	VCE=-5V,IC=-10mA , f=30MHz		150		MHz
Collector output capacitance	Cob	VCB=-10V, IE=0, f=1MHz			7	pF