NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic Encapsulate

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Product Description

SS8050W Transistor (NPN)

The SS8050W is an NPN bipolar junction transistor, complementary to the SS8550W. It is designed for general-purpose applications and is marked with 'Y1'.

Product Attributes

Brand: JTD (SHENZHEN JTD ELECTRONICS CO.,LTD)
Origin: Shenzhen, China
Material: Plastic-Encapsulate Transistor
Package Outline: SOT-323

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0		40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA, IB=0		25	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0		5	V
Collector cut-off current	ICBO	VCB=40V, IE=0		0.1	A
Collector cut-off current	ICEO	VCE=20V, IE=0		0.1	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0		0.1	A
DC current gain (hFE(1))	hFE(1)	VCE=1V, IC= 100mA	120	400
DC current gain (hFE(2))	hFE(2)	VCE=1V, IC= 800mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=800mA, IB= 80mA		0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800mA, IB= 80mA		1.2	V
Transition frequency	fT	VCE=10V, IC= 50mA, f=30MHz		100	MHz
Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHz		15	pF
Collector-Base Voltage	VCBO			40	V
Collector-Emitter Voltage	VCEO			25	V
Emitter-Base Voltage	VEBO			5	V
Collector Current	IC			1.5	A
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)		250	mW
Thermal Resistance Junction To Ambient	RJA			500	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55	+150