NPN Transistor JTD JTDBC847BW Plastic Encapsulate Ideal for Switching and AF Amplifier Applications

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Product Description

Product Overview

The BC846BW, BC847BW, and BC848BW are NPN transistors ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.

Product Attributes

Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
Origin: Shenzhen (implied by brand)
Material: Plastic-Encapsulate Transistors

Technical Specifications

Model	Parameter	Value	Unit	Test Conditions
BC846BW	Collector-Base Voltage (VCBO)	80	V	IC= 10A, IE=0
	Collector-Emitter Voltage (VCEO)	65	V	IC= 10mA, IB=0
	Emitter-Base Voltage (VEBO)	6	V	IE= 1 A, IC=0
	Collector Current Continuous (IC)	0.1	A
	Collector Power Dissipation (PC)	150	mW	Ta=25
	DC current gain (hFE)	110-420		VCE= 5V, IC= 10A
	DC current gain (hFE)	90-270		VCE= 5V, IC= 2mA
	Collector-emitter saturation voltage (VCE(sat))	0.25	V	IC=10mA, IB=0.5mA
	Collector-emitter saturation voltage (VCE(sat))	0.6	V	IC=100mA, IB=5mA
	Base-emitter saturation voltage (VBE(sat))	0.7	V	IC=10mA, IB=0.5mA
BC847BW	Collector-Base Voltage (VCBO)	50	V	IC= 10A, IE=0
	Collector-Emitter Voltage (VCEO)	45	V	IC= 10mA, IB=0
	Emitter-Base Voltage (VEBO)	6	V	IE= 1 A, IC=0
	Collector Current Continuous (IC)	0.1	A
	Collector Power Dissipation (PC)	150	mW	Ta=25
	DC current gain (hFE)	110-420		VCE= 5V, IC= 10A
	DC current gain (hFE)	90-270		VCE= 5V, IC= 2mA
	Collector-emitter saturation voltage (VCE(sat))	0.25	V	IC=10mA, IB=0.5mA
	Collector-emitter saturation voltage (VCE(sat))	0.6	V	IC=100mA, IB=5mA
	Base-emitter saturation voltage (VBE(sat))	0.7	V	IC=10mA, IB=0.5mA
BC848BW	Collector-Base Voltage (VCBO)	30	V	IC= 10A, IE=0
	Collector-Emitter Voltage (VCEO)	30	V	IC= 10mA, IB=0
	Emitter-Base Voltage (VEBO)	5	V	IE= 1 A, IC=0
	Collector Current Continuous (IC)	0.1	A
	Collector Power Dissipation (PC)	150	mW	Ta=25
	DC current gain (hFE)	110-420		VCE= 5V, IC= 10A
	DC current gain (hFE)	90-270		VCE= 5V, IC= 2mA
	Collector-emitter saturation voltage (VCE(sat))	0.25	V	IC=10mA, IB=0.5mA
	Collector-emitter saturation voltage (VCE(sat))	0.6	V	IC=100mA, IB=5mA
	Base-emitter saturation voltage (VBE(sat))	0.7	V	IC=10mA, IB=0.5mA
Operation Junction and Storage Temperature Range (TJ,Tstg): -55-150
Thermal Resistance From Junction To Ambient (RJA): 833 /W
Collector Cutoff Current (ICBO): 15 nA (VCB=30V)
Base-emitter voltage (VBE(on)): 580-770 mV (VCE= 5V)
Transition frequency (fT): 100 MHz (VCE= 5 V, IC= 10mA, f=100MHz)
Collector output capacitance (Cob): 4.5 pF (VCB=10V,f=1MHz)