PNP Transistor JTD JTD5401 SOT89 3L Package Suitable for High Voltage Switching Applications

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Product Description

Product Overview

PNP Transistor in SOT-89-3L package designed for switching and amplification in high voltage applications such as telephony. Features low current (max. 500mA) and high voltage (max. 160V).

Product Attributes

Brand: JTD
Origin: SHENZHEN
Marking: 5401

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-160	V
Collector-Emitter Voltage	VCEO				-150	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current - Continuous	IC				-0.5	A
Collector Power Dissipation	PC				0.5	W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		150
Thermal Resistance From Junction To Ambient	RJA			250		/W
Collector-base breakdown voltage	V(BR)CBO	IC= -100A, IE=0			-160	V
Collector-emitter breakdown voltage	V(BR)CEO	IC = -1mA, IB=0			-150	V
Emitter-base breakdown voltage	V(BR)EBO	IE = -10A, IC=0			-5	V
Collector cut-off current	ICBO	VCB = -120 V, IE=0			-50	nA
Emitter cut-off current	IEBO	VEB= -3V, IC=0			-50	nA
DC current gain	hFE(1)	VCE= -5V, IC=-1 mA	50
	hFE(2)	VCE= -5V, IC= -10 mA		100	300
	hFE(3)	VCE= -5V, IC=-50 mA	50
Collector-emitter saturation voltage	VCE(sat)	IC= -10 mA, IB= -1 mA			-0.2	V
Collector-emitter saturation voltage	VCE(sat)	IC= -50 mA, IB= -5 mA			-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC= -10 mA, IB= -1 mA			-1	V
Base-emitter saturation voltage	VBE(sat)	IC= -50 mA, IB= -5 mA			-1	V
Transition frequency	f T	VCE= -10V, IC= -10mA, f = 100MHz		100	300	MHz
Output Capacitance	Cob	VCB=-10V, IE= 0,f=1MHz			6	pF
Noise Figure	NF	VCE= -5.0V, IC= -200A, RS= 10,f =10Hz to15.7kHz			8	dB