General purpose switching transistor JUXING MMBT4403 2T PNP transistor with SOT23 package

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Product Description

Product Overview

PNP Switching Transistor. Designed for general-purpose switching applications.

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
V_CBO	Collector-Base Voltage				-40	V
V_CEO	Collector-Emitter Voltage				-40	V
V_EBO	Emitter-Base Voltage				-5	V
I_C	Collector Current				-600	mA
P_C	Collector Power Dissipation				300	mW
R_JA	Thermal Resistance From Junction To Ambient			417	/W
T_j	Junction Temperature				150
T_stg	Storage Temperature		-55		+150
V_(BR)CBO	Collector-base breakdown voltage	I_C=-100A,I_E=0	-40			V
V_(BR)CEO	Collector-emitter breakdown voltage	I_C=-1mA,I_B=0	-40			V
V_(BR)EBO	Emitter-base breakdown voltage	I_E=-100A ,I_C=0	-5			V
I_CBO	Collector cut-off current	V_CB=-35V,I_E=0			-0.1	A
I_CEX	Collector cut-off current	V_CE=-35V, V_BE=0.4V			-0.1	A
I_EBO	Emitter cut-off current	V_EB=-4V,I_C=0			-0.1	A
h_FE1	DC current gain	V_CE=-1V, I_C=-0.1mA	30
h_FE2	DC current gain	V_CE=-1V, I_C=-1mA		60
h_FE3	DC current gain	V_CE=-1V, I_C=-10mA		100
h_FE4	DC current gain	V_CE=-2V, I_C=-150mA	100		300
h_FE5	DC current gain	V_CE=-2V, I_C=-500mA		20
V_CE(sat)	Collector-emitter saturation voltage	I_C=-150mA,I_B=-15mA			-0.4	V
V_CE(sat)	Collector-emitter saturation voltage	I_C=-500mA,I_B=-50mA			-0.75	V
V_BE(sat)	Base-emitter saturation voltage	I_C=-150mA,I_B=-15mA			-0.95	V
V_BE(sat)	Base-emitter saturation voltage	I_C=-500mA,I_B=-50mA			-1.3	V
f_T	Transition frequency	V_CE=-10V, I_C=-20mA,f =100MHz	200			MHz
t_d	Delay time	V_CC=-30V, V_BE(off)=-0.5V I_C=-150mA , I_B1=-15mA		15		ns
t_r	Rise time			20		ns
t_s	Storage time	V_CC=-30V, I_C=-150mA I_B1=I_B2=-15mA		225		ns
t_f	Fall time			60		ns