Complementary Dual Transistors JTD JTDMMDT3946DW NPN and PNP in SOT363 Package for Switching Devices

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Product Description

Product Overview

Complementary Pair, Epitaxial Planar Die Construction, ideal for low power amplification and switching. This dual transistor package contains one 3904-type NPN and one 3906-type PNP transistor.

Product Attributes

Brand: JTD
Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
Model: MMDT3946DW
Package: SOT-363 Plastic-Encapsulate Transistors

Technical Specifications

Parameter	NPN (3904-Type)	PNP (3906-Type)
Collector-Base Voltage (V(BR)CBO)	60 V	-40 V
Collector-Emitter Voltage (V(BR)CEO)	40 V	-40 V
Emitter-Base Voltage (V(BR)EBO)	5 V	-5 V
Collector Current - Continuous (IC)	0.2 A	-0.2 A
Collector Power Dissipation (PC)	0.2 W	0.2 W
Junction Temperature (TJ)	150	150
Storage Temperature (Tstg)	-55-150	-55-150
Collector Cutoff Current (ICBO)	0.05 A @ VCB=30 V, IE=0	-0.05 A @ VCB=-30V,IE=0
Emitter Cutoff Current (IEBO)	0.05 A @ VEB=5V , IC=0	-0.05 A @ VEB=-5V,IC=0
DC Current Gain (hFE) @ VCE=1V, IC=0.1mA	40	60
DC Current Gain (hFE) @ VCE=1V, IC=1mA	70	80
DC Current Gain (hFE) @ VCE=1V, IC=10mA	100-300	100-300
DC Current Gain (hFE) @ VCE=1V, IC=50mA	60	60
DC Current Gain (hFE) @ VCE=1V, IC=100mA	30	30
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=10 mA, IB=1mA	0.2 V	-0.25 V
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=50 mA, IB=5mA	0.3 V	-0.4 V
Base-Emitter Saturation Voltage (VBE(sat)) @ IC=10 mA, IB=1mA	0.65-0.85 V	-0.65--0.85 V
Base-Emitter Saturation Voltage (VBE(sat)) @ IC=50 mA, IB=5mA	0.95 V	-0.95 V
Transition Frequency (fT) @ VCE=20V,IC=20mA, f=100MHz	300 MHz	250 MHz
Noise Figure (NF) @ VCE=5V,Ic=0.1mA, f=1KHz,Rg=1K	5 dB	4 dB
Output Capacitance (Cob) @ VCB=5V,IE=0,f=1MHz	4 pF	4.5 pF
Delay Time (td)	35 nS	35 nS
Rise Time (tr) @ VCC=3V, VBE=0.5V IC=10mA , IB1=- IB2=1mA	35 nS	35 nS
Storage Time (tS)	200 nS	225 nS
Fall Time (tf) @ VCC=3V, IC=10mA IB1=-IB2=1mA	50 nS	75 nS