NPN transistor JTD JTD3904 suitable for electronic circuits general purpose component in SOT23 package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The JTD3904 is an NPN transistor designed for general-purpose applications. It offers complementary characteristics to the JTD3904 and is suitable for various electronic circuits. The device is available in a SOT-23 package.

Product Attributes

Brand: JTD
Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
Material: Plastic-Encapsulate Transistors
Color: Green molding compound device (if applicable)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=10A, IE=0			60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0			40	V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0			6	V
Collector cut-off current	ICEX	VCE=30V, VEB(off)=3V			50	nA
Collector cut-off current	ICBO	VCB= 60V, IE=0			100	nA
Emitter cut-off current	IEBO	VEB=5V, IC=0			100	nA
DC current gain	hFE(1)	VCE=1V, IC=10mA	100	300
DC current gain	hFE(2)	VCE=1V, IC=50mA		60
DC current gain	hFE(3)	VCE=1V, IC=100mA		30
Collector-emitter saturation voltage	VCE(sat)	IC=50mA, IB=5mA		0.3		V
Base-emitter saturation voltage	VBE(sat)	IC=50mA, IB=5mA		0.95		V
Transition frequency	fT	VCE=20V,IC=10mA, f=100MHz		300		MHz
Delay time	td	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA		35		ns
Rise time	tr	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA		35		ns
Storage time	ts	VCC=3V, IC=10mA, IB1= IB2=1mA		200		ns
Fall time	tf	VCC=3V, IC=10mA, IB1= IB2=1mA		50		ns
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				200	mA
Collector Power Dissipation	PC				200	mW
Thermal Resistance Junction To Ambient	RJA			625		/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150