medium power NPN transistor JUXING MMBT5551 G1 ideal for switching and amplification in electronics

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Product Description

MMBT5551 TRANSISTOR (NPN)

The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401, offering a versatile solution for various electronic circuits.

Product Attributes

Marking: G1
Complementary to: MMBT5401

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				180	V
Collector-Emitter Voltage	VCEO				160	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				600	mA
Collector Power Dissipation	PC	(Ta=25)			300	mW
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	180			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	160			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector cut-off current	ICBO	VCB=120V, IE=0			50	nA
Emitter cut-off current	IEBO	VEB=4V, IC=0			50	nA
DC current gain	hFE(1)	VCE=5V, IC=1mA	80
	hFE(2)	VCE=5V, IC=10mA	100		300
	hFE(3)	VCE=5V, IC=50mA	50
Collector-emitter saturation voltage	VCE(sat)1	IC=10mA, IB=1mA		0.15		V
Collector-emitter saturation voltage	VCE(sat)2	IC=50mA, IB=5mA		0.2		V
Base-emitter saturation voltage	VBE(sat)1	IC=10mA, IB=1mA		1		V
Base-emitter saturation voltage	VBE(sat)2	IC=50mA, IB=5mA		1		V
Transition frequency	fT	VCE=10V,IC=10mA, f=100MHz		100	300	MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz			6	pF