High Reliability NPN Transistor JUXING S8050 Designed for Various Electronic Amplification and Switching

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Product Description

Product Overview

The S8050 is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. It is complementary to the S8550 transistor, offering a collector current of up to 0.5A. This transistor is suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

Brand: S8050 (Marking: J3Y)
Packaging: SOT-23 Plastic-Encapsulate Transistors
Complementary to: S8550
Website: http://www.trr-jx.com

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0			40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0			25	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0			5	V
Collector cut-off current	ICBO	VCB=40 V , IE=0			0.1	A
Collector cut-off current	ICEO	VCB=20V , IE=0			0.1	A
Emitter cut-off current	IEBO	VEB= 5V , IC=0			0.1	A
DC current gain	hFE(1)	VCE=1V, IC= 50mA	120		400
DC current gain	hFE(2)	VCE=1V, IC= 500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=500 mA, IB= 50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500 mA, IB= 50mA			1.2	V
Transition frequency	fT	VCE=6V, IC= 20mA, f=30MHz		150		MHz

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	40	V
Collector-Emitter Voltage	VCEO	25	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	500	mA
Collector Power Dissipation	PC	300	mW
Thermal Resistance From Junction To Ambient	RJA	417	/W
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55+150