Electronic Switching Transistor JUXING MMBT4401 2X NPN SOT23 Package for General Applications

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Product Description

MMBT4401 TRANSISTOR (NPN)

The MMBT4401 is an NPN switching transistor designed for general-purpose applications. Its robust construction and reliable performance make it suitable for various electronic circuits requiring efficient switching capabilities.

Product Attributes

Brand: MMBT4401 (Implied from product name)
Type: NPN Transistor
Package: SOT-23
Origin: http://www.trr-jx.com (Implied from URL)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				600	mA
Collector Power Dissipation	PC	(Ta=25)			300	mW
Thermal Resistance Junction To Ambient	RJA			417	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A ,IC=0	6			V
Collector cut-off current	ICBO	VCB=50V,IE=0			0.1	A
Collector cut-off current	ICEX	VCE=35V, VEB=0.4V			0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	A
DC current gain	hFE1	VCE=1V, IC=0.1mA	20
DC current gain	hFE2	VCE=1V, IC=1mA	40
DC current gain	hFE3	VCE=1V, IC=10mA	80
DC current gain	hFE4	VCE=1V, IC=150mA	100		300
DC current gain	hFE5	VCE=2V, IC=500mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=150mA,IB=15mA			0.4	V
Collector-emitter saturation voltage	VCE(sat)	IC=500mA,IB=50mA			0.75	V
Base-emitter saturation voltage	VBE(sat	IC=150mA,IB=15mA			0.95	V
Base-emitter saturation voltage	VBE(sat	IC=500mA,IB=50mA			1.2	V
Transition frequency	fT	VCE=10V, IC=20mA,f =100MHz		250		MHz
Delay time	td	VCC=30V, VBE(off)=-2V IC=150mA , IB1=15mA		15		ns
Rise time	tr			20		ns
Storage time	ts	VCC=30V, IC=150mA IB1=IB2=15mA		225		ns
Fall time	tf			60		ns