NPN bipolar transistor JUXING BC817-25 designed for general AF applications featuring low saturation voltage

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Product Description

Product Overview

The BC817 is an NPN bipolar transistor designed for general AF applications. It offers high collector current, high current gain, and a low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).

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Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	VCBO	IC= 10A, IE=0			50	V
Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0			45	V
Emitter-base breakdown voltage	VEBO	IE=1A, IC=0			5	V
Collector cut-off current	ICBO	VCB= 45 V , IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=4V, IC=0			0.1	A
DC current gain	hFE(1)	VCE=1V, IC= 100mA	100		600
DC current gain	hFE(2)	VCE=1V, IC= 500mA	40
Collector-emitter saturation voltage	VCE(sat)	IC= 500mA, IB= 50mA			0.7	V
Base-emitter saturation voltage	VBE(sat)	IC= 500mA, IB= 50mA			1.2	V
Base-emitter voltage	VBE	VCE= 1 V, IC= 500mA		1.2		V
Collector capacitance	Cob	VCB=10V ,f=1MHz		10		pF
Transition frequency	fT	VCE= 5 V, IC=10mA f=100MHz		100		MHz
Collector-Base Voltage	VCBO				50	V
Collector-Emitter Voltage	VCEO				45	V
Emitter-Base Voltage	VEBO				5	V
Collector Current	IC				500	mA
Collector Power Dissipation	PC				300	mW
Thermal Resistance Junction To Ambient	RJA			417		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150