NPN Transistor JUXING BC848A Plastic Encapsulated Perfect for Switching and AF Amplifier Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BC846, BC847, and BC848 are SOT-23 plastic-encapsulated NPN transistors ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic Encapsulate
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Model	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	BC846	VCBO	IE=0			80	V
Collector-Base Voltage	BC847	VCBO	IE=0			50	V
Collector-Base Voltage	BC848	VCBO	IE=0			30	V
Collector-Emitter Voltage	BC846	VCEO	IB=0			65	V
Collector-Emitter Voltage	BC847	VCEO	IB=0			45	V
Collector-Emitter Voltage	BC848	VCEO	IB=0			30	V
Emitter-Base Voltage	All	VEBO	IC=0			6	V
Collector Current Continuous	All	IC				0.1	A
Collector Power Dissipation	All	PC				200	mW
Junction Temperature	All	TJ				150
Storage Temperature	All	Tstg		-55		+150
Thermal Resistance Junction To Ambient	All	RJA			625	/W
Collector-base breakdown voltage	BC846	VCBO	IC= 10A, IE=0	80			V
Collector-base breakdown voltage	BC847	VCBO	IC= 10A, IE=0	50			V
Collector-base breakdown voltage	BC848	VCBO	IC= 10A, IE=0	30			V
Collector-emitter breakdown voltage	BC846	VCEO	IC= 10mA, IB=0	65			V
Collector-emitter breakdown voltage	BC847	VCEO	IC= 10mA, IB=0	45			V
Collector-emitter breakdown voltage	BC848	VCEO	IC= 10mA, IB=0	30			V
Emitter-base breakdown voltage	All	VEBO	IE= 10A, IC=0			6	V
Collector cut-off current	BC846	ICBO	VCB=70 V , IE=0			0.1	A
Collector cut-off current	BC847	ICBO	VCB=50 V , IE=0			0.1	A
Collector cut-off current	BC848	ICBO	VCB=30 V , IE=0			0.1	A
Emitter cut-off current	All	IEBO	VEB=5 V , IC=0			0.1	A
DC current gain	BC846A,847A,848A	hFE	VCE= 5V, IC= 2mA	110
DC current gain	BC846B,847B,848B	hFE	VCE= 5V, IC= 2mA	200
DC current gain	BC847C,BC848C	hFE	VCE= 5V, IC= 2mA	420
Collector-emitter saturation voltage	All	VCE(sat)	IC=100mA, IB= 5mA			0.5	V
Base-emitter saturation voltage	All	VBE(sat)	IC=100mA, IB= 5mA			1.1	V
Transition frequency	All	fT	VCE= 5 V, IC= 10mA, f=100MHz		100		MHz
Collector output capacitance	All	Cob	VCB=10V,f=1MHz			4.5	pF