high power transistor JUXING D13007MF designed for electronic ballasts and general power circuits

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Product Description

Product Overview

The D13007MF is a high power NPN bipolar transistor designed for electronic ballasts and general power amplifier circuits. It features high frequency power conversion, high switching speed, high reliability, high current capacity, and high withstand voltage, utilizing advanced planar process technology and triple diffusion technology for an optimal balance between current capacity and endurance.

Product Attributes

Brand: trr-jx.com
Model: D13007MF
Version: 02

Technical Specifications

Symbol	Item	Test Conditions	Minimum and maximum values	Unit
VCBO	Collector-Base DC Voltage		700	V
VCEO	Collector-Emitter DC Voltage		400	V
VEBO	Emitter-Base DC Voltage		8	V
Ic	Maximum Collector DC Current		11	A
Pc	Maximum Collector Power Dissipation		150	W
Tj	Maximum Junction Temperature		150	C
Ts	Storage Temperature		-55~+150	C
VCE(sat)(1)	Collector emitter saturation voltage drop	IC=2A, IB=0.4A	1.2	V
VCE(sat)(2)	Collector emitter saturation voltage drop	IC=8A, IB=2A	1.56	V
VBE(sat)	Base emitter saturation voltage drop	IC=8A, IB=2A	2.5	V
hFE(1)	DC Current Gain	IC=2A, IB=0.5A	50
hFE(2)	DC Current Gain	IC=5A, IB=2A	70
tf	Fall time	IC=5A, VCC=24V	0.7	S
tr	Rise time			S
ts	Storage time	IB1=-IB2=11A	1.2	S
VCEO(SUS)	Collector-Emitter Holding Voltage	Ic=10mA,IB=0	400	V
V(BR)CBO	Collector-Base Breakdown Voltage	Ic=1mA,IB=0	700	V
V(BR)EBO	Emitter-Base Breakdown Voltage	IE=1mA,Ic=0	7	V
ICBO	Collector-Base Reverse Leakage Current	VCB=700V, IE=0	0.5	mA
ICEO	Collector-Emitter Reverse Leakage Current	VCE=430V,IB=0	0.1	mA
IEBO	Emitter-Base Reverse Leakage Current	VEB=7V, IC=0	1	mA
f	Characteristic frequency	VCE=5V, IC=5A	5	MHz
Rth(jc)	Project junction to case thermal resistance		1.2	V /W