NPN transistor JUXING MMBT2222A-1P in SOT-23 package designed for switching and amplification

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Product Description

MMBT2222A TRANSISTOR (NPN)

The MMBT2222A is an NPN transistor featuring epitaxial planar die construction. It is designed for general-purpose applications and offers complementary PNP type availability (MMBT2907A). This device is suitable for various switching and amplification circuits.

Product Attributes

Brand: trr-jx
Model: MMBT2222A
Type: NPN Transistor
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				75	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current -Continuous	IC				600	mA
Collector Dissipation	PC	(Ta=25)			300	mW
Collector-base breakdown voltage	V(BR)CBO	IC= 10A, IE=0	75			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 10mA, IB=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector cut-off current	ICBO	VCB=60V, IE=0		0.01		A
Collector cut-off current	ICEX	VCE=30V,VBE(off)=3V		0.01		A
Emitter cut-off current	IEBO	VEB= 3V, IC=0		0.1		A
DC current gain	hFE	VCE=10V, IC= 150mA	100		300
DC current gain	hFE	VCE=10V, IC= 0.1mA	40
DC current gain	hFE	VCE=10V, IC= 500mA		42
Collector-emitter saturation voltage	VCE(sat)	IC=500 mA, IB= 50mA		1		V
Collector-emitter saturation voltage	VCE(sat)	IC=150 mA, IB=15mA		0.3		V
Base-emitter saturation voltage	VBE(sat)	IC=500 mA, IB= 50mA		2.0		V
Base-emitter saturation voltage	VBE(sat)	IC=150 mA, IB=15mA		1.2		V
Transition frequency	fT	VCE=20V, IC= 20mA, f=100MHz		300		MHz
Delay time	td	VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA		10		ns
Rise time	tr	VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA		25		ns
Storage time	tS	VCC=30V, IC=150mA IB1=-IB2=15mA		225		ns
Fall time	tf	VCC=30V, IC=150mA IB1=-IB2=15mA		60		ns