30 Volt 80 Amp N Channel MOSFET JUXING JX3080K Suitable for Electronic Switching Applications
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Product Description
Product Overview
The JX3080K is an N-Channel Enhancement Mode MOSFET designed for efficient load switching applications. It features 30V MOSFET technology, low on-state resistance, and fast switching capabilities, making it suitable for various electronic designs. The device offers a Vgs range of 20V.
Product Attributes
- Brand: JX
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Part Number | VDS (V) | RDS(on) Typ. (m) | ID Max. (A) | VGS (V) | Package |
| JX3080K | 30 | 3.8 | 80 | 10 | TO-252 |
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Drain to Source Breakdown Voltage | V(BR)DSS | ID = 250A, VGS = 0V | 30 | 33.5 | V | |
| Zero-Gate Voltage Drain Current | IDSS | VDS = 30V, VGS = 0V | 1 | A | ||
| Gate to Source Leakage Current | IGSS1 | VGS = 20V, VSS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1.2 | 1.7 | 2.2 | V |
| Static Drain to Source On-State Resistance | RDS(on) | ID = 30A, VGS = 10V | 3.8 | 4.6 | m | |
| Static Drain to Source On-State Resistance | RDS(on) | ID = 20A, VGS = 4.5V | 6.3 | 9 | m | |
| Input Capacitance | Ciss | VGS=0V, VDS=15V, Frequency=1.0MHz | 1615 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=15V, Frequency=1.0MHz | 245 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, Frequency=1.0MHz | 216 | pF | ||
| Turn-ON Delay Time | td(on) | VDS= 15V, ID = 30A, VGS = 10V, RG = 3 | 7.5 | ns | ||
| Rise Time | tr | VDS= 15V, ID = 30A, VGS = 10V, RG = 3 | 14.5 | ns | ||
| Turn-OFF Delay Time | td(off) | VDS= 15V, ID = 30A, VGS = 10V, RG = 3 | 35 | ns | ||
| Fall Time | tf | VDS= 15V, ID = 30A, VGS = 10V, RG = 3 | 9.6 | ns | ||
| Total Gate Charge | Qg | VDS = 15V, VGS = 10V, ID = 30A | 33.8 | nC | ||
| Gate to Source Charge | Qgs | VDS = 15V, VGS = 10V, ID = 30A | 8.5 | nC | ||
| Gate to Drain Charge | Qgd | VDS = 15V, VGS = 10V, ID = 30A | 7.5 | nC | ||
| Diode Forward Voltage | VFSD | IS = 30A, VGS = 0 | 0.3 | 1.2 | V |
| Parameter | Symbol | Maximum | Units |
| Drain to Source Voltage | VDSS | 30 | V |
| Gate to Source Voltage | VGSS | 20 | V |
| Drain Current (DC) | ID | 80 | A |
| Drain Current (Pulse) | IDP | 280 | A |
| Total Dissipation | PD | 46 | W |
| Avalanche Energy, Single Pulsed | EAS | 169 | mJ |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55 to +150 |
| Parameter | Symbol | Value | Unit |
| Junction to case Thermal Resistance | RJC | 2.72 | /W |
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