KEC BAV70-RTK P diode silicon epitaxial planar type for ultra high speed switching in SOT 23 package

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Product Description

Product Overview

The BAV70 is a silicon epitaxial planar diode designed for ultra-high speed switching applications. It features a small SOT-23 package, low forward voltage (0.9V typ.), fast reverse recovery time (1.6ns typ.), and small total capacitance (0.9pF typ.). The suffix 'U' indicates AEC-Q101 qualification, suitable for automotive applications (e.g., BAV70-RTK/HU).

Product Attributes

Brand: SEMICONDUCTOR
Type: SILICON EPITAXIAL PLANAR DIODE
Application: ULTRA HIGH SPEED SWITCHING
Package: SOT-23
Qualification: AEC-Q101 (Suffix U)

Technical Specifications

Characteristic	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Forward Voltage	VF(1)	IF=1mA	-	0.60	-	V
Forward Voltage	VF(2)	IF=10mA	-	0.72	-	V
Forward Voltage	VF(3)	IF=150mA	-	-	1.25	V
Reverse Current	IR	VR=80V	-	-	0.5	A
Total Capacitance	CT	VR=0, f=1MHz	-	-	3.0	pF
Reverse Recovery Time	trr	IF=10mA	-	-	4.0	nS

Ratings

Characteristic	Rating	Unit
Maximum (Peak) Reverse Voltage	VRM	85	V
Reverse Voltage	VR	80	V
Continuous Forward Current	IF	250	mA
Surge Current (10ms)	IFSM	2	A
Power Dissipation	PD	225* / 300**	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150