KEC KDS120E-RTK P diode silicon epitaxial type featuring ultra high speed switching and low total capacitance

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Product Description

Product Overview

The KDS120E is a silicon epitaxial type diode designed for ultra-high-speed switching applications. It features a small ESM package, low forward voltage (0.92V typ.), fast reverse recovery time (1.6ns typ.), and small total capacitance (2.2pF typ.). This diode is suitable for applications requiring rapid switching performance.

Product Attributes

Type: Silicon Epitaxial Diode
Application: Ultra High Speed Switching
Package: ESM

Technical Specifications

Characteristic	Symbol	Rating	Unit
Maximum (Peak) Reverse Voltage	VRM	85	V
Reverse Voltage	VR	80	V
Maximum (Peak) Forward Current	IFM	300 *	mA
Average Forward Current	IO	100 *	mA
Surge Current (10ms)	IFSM	2 *	A
Power Dissipation	PD	100	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55150

Characteristic	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Forward Voltage	VF(1)	IF=1mA	-	0.61	-	V
Forward Voltage	VF(2)	IF=10mA	-	0.74	-	V
Forward Voltage	VF(3)	IF=100mA	-	0.92	1.20	V
Reverse Current	IR	VR=80V	-	-	0.5	A
Total Capacitance	CT	VR=0, f=1MHz	-	2.2	4.0	pF
Reverse Recovery Time	trr	IF=10mA	-	1.6	4.0	nS

Dimension	Symbol	Value	Unit
Dimension A	A	1.60	MM
Dimension B	B	0.20	MM
Dimension C	C	0.70	MM
Dimension D	D	1.60	MM
Dimension E	E	0.39	MM
Dimension F	F	0.27	MM
Dimension G	G	1.00	MM
Dimension H	H	0.50	MM
Dimension J	J	0.05	MM