Electrical Power Control Device KEXIN BT169 SCR Thyristor with 0.5A Average On State Current

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BT169 (KT169) is an SCR Thyristor designed for various electronic applications. It features repetitive peak off-state voltages up to 400V, an average on-state current of 0.5A, and an RMS on-state current of 0.8A. This device is suitable for applications requiring reliable switching and control of electrical power.

Product Attributes

Brand: Kexin
SMD Type: Yes
Origin: China (implied by www.kexin.com.cn)

Technical Specifications

Parameter	Symbol	BT169-400	Unit	Test Conditions
Repetitive peak off-state voltages	VDRM, VRRM	400	V	IDRM=IRRM50uA
Average on-state current	IT(AV)	0.5	A
RMS on-state current	IT(RMS)	0.8	A
Non-Repetitive peak on-state current (t=10ms)	ITSM	8	A
Non-Repetitive peak on-state current (t=8.3ms)	ITSM	9	A
Repetitive Rate of rise of on-state Current after Triggering	dIT/dt	50	A/us
Circuit Fusing Considerations (t = 10ms)	I2t	0.32	A2s
Peak Gate Current	IGM	1	A
Peak Gate Voltage	VGM	5	V
Peak Gate Voltage (Reverse)	VGRM	5	V
Peak Gate Power	PGM	2	W
Average Gate Power	PGF(AV)	0.1	W
Forward Thermal Resistance Junction to Ambient	RthJA	150	K/W
Thermal Resistance Junction to Case	RthJC	60	K/W
Junction Temperature	TJ	125	C
Storage Temperature Range	Tstg	-40 to 150	C
Off-state Leakage Current	ID,IR	0.1	mA	VDRM=VRRM(max);Tj=125; RGK=1k
On-state Voltage	VTM	1.5	V	IT=1A
Gate Trigger Current (Continuous dc)	IGT	200	uA	VD=12V, IT=10mA
Latching Current	IL	6	mA	VD=12V, IGT=0.5mA; RGK=1k
Holding Current	IH	5	mA	VD=12V, IGT=0.5mA; RGK=1k
Critical Rate of rise of off-state Voltage	dVD/dt	25	V/us	VDM=67% VDRM(max); Tj=125 exponential waveform; RGK=1k
Gate Controlled turn-on time	tgt	2	us	ITM=2A; VD=VDRM(max),G=10mA; dIG/dt=0.1A/us
Circuit Commutated turn-off time	tq	100	us	VD=67% VDRM(max); Tj=125, TM=1.6A; VR=35V; dITM/dt=30A/us,dVD/dt=2V/us; RGK=1k
Gate Trigger Voltage	VGT	0.8	V	VD=12V, IT=10mA