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N CHANNEL MOSFET KIA Semicon Tech KIA2302 with 3 Amp Continuous Drain Current and Thermal Resistance

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

This N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 2302, is designed for applications requiring a 3.0A continuous drain current and a 20V drain-source voltage. It offers low on-resistance characteristics at various gate-source voltages and drain currents, making it suitable for power switching and amplification tasks.

Product Attributes

  • Brand: KIA SEMICONDUCTORS
  • Model: 2302
  • Type: N-CHANNEL MOSFET

Technical Specifications

ParameterSymbolRatingUnitsTest Conditions
Drain-source voltageVDS20V
Gate-source voltageVGS+8V
Drain current continuous (TJ=150 C) TA=25CID3.0A
Pulsed drain currentIDMa
Continuous source current (diode conduction)IS1.0A
Power dissipation TA=25CPD1.0W
Junction and storage temperature rangeTJ ,TSTG-55 to150C
Thermal Resistance from Junction to Ambient(t 5s)RthJA156C/W
Drain-source breakdown voltageV(BR)DSS20VVGS=0V,ID=250A
Gate threshold voltageVGS(th)0.5 - 1.0VVDS=VGS, ID=250A
Gate- body leakageIGSS- +100nAVGS=+8V, VDS=0V
Zero gate voltage drain currentIDSS- 1uAVDS=16V, VGS=0V
Static drain-source on-resistanceRDS(on)- 45 50mVGS=4.5V,ID=3.0A
- 55 65VGS=2.5V,ID=2.0A
Forward transconductancegfs- 8SVDS=5V, ID=-3.0A
Diode forward voltageVSD- - 1.3VVGS=0V,IS=1.0A
Total gate chargeQg- 5.4nCVDS=10V, VGS=4.5V ID=3.0A
Gate-source chargeQgs- 1.1
Gate-drain chargeQgd- 0.7
Input capacitanceCiss- 300pFVDS=10V,VGS=0V, f=1MHz
Output capacitanceCoss- 120pF
Reverse transfer capacitanceCrss- 85pF
Switching timestd(on)- 12nsVDD=10V, ID =3.0A, RG=6, VGEN=4.5V
tr- 84
td(off)- 43
tf- 18

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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