N CHANNEL MOSFET 160A 100V KIA Semicon Tech KNB2710A with low switching loss and fast recovery diode
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Product Description
Product Overview
The KIA SEMICONDUCTORS KNX2710A is a 160A, 100V N-CHANNEL MOSFET featuring proprietary new trench technology. It offers a low RDS(ON) of 4.5 m typ. at VGS=10V, low gate charge for minimized switching loss, and a fast recovery body diode. This MOSFET is ideal for high efficiency DC/DC converters, synchronous rectification, and UPS inverters.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Part Number: KNX2710A
- Package: TO-263
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-to-Source Voltage (VDSS) | -- | -- | 100 | V | |
| Gate-to-Source Voltage (VGSS) | -- | -- | ±20 | V | |
| Continuous Drain Current (ID) | [2] | -- | -- | 160 | A |
| Continuous Drain Current (ID) | [3] | -- | -- | 80 | A |
| Continuous Drain Current @ TC=100 C (ID) | [2] | -- | -- | 120 | A |
| Pulsed Drain Current at VGS=10V (IDM) | [2,4] | -- | -- | 640 | A |
| Single Pulse Avalanche Energy (EAS) | -- | -- | 1200 | mJ | |
| Peak Diode Recovery dv/dt | [3] | -- | -- | 5.0 | V/ns |
| Power Dissipation (PD) | -- | -- | 333 | W | |
| Maximum Temperature for Soldering - Leads | at 0.063in (1.6mm) from Case for 10 seconds | -- | -- | 300 | ºC |
| Maximum Temperature for Soldering - Package Body | for 10 seconds | -- | -- | 260 | ºC |
| Operating and Storage Temperature Range (TJ&TSTG) | -55 | -- | 175 | ºC | |
| Electrical Characteristics | |||||
| OFF Characteristics (TJ=25ºC, unless otherwise specified) | |||||
| Drain-to-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 100 | -- | -- | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V, VGS=0V | -- | -- | 5 | uA |
| Drain-to-Source Leakage Current (IDSS) | VDS=80V,VGS=0V, TJ =125ºC | -- | -- | 100 | uA |
| Gate-to-Source Leakage Current (IGSS) | VGS=+20V,VDS=0V | -- | -- | +100 | nA |
| Gate-to-Source Leakage Current (IGSS) | VGS=-20V, VDS=0V | -- | -- | -100 | nA |
| ON Characteristics (TJ=25ºC, unless otherwise specified) | |||||
| Static Drain-to-Source On-Resistance (RDS(ON)) | VGS=10V, ID=25A[5] | -- | 4.5 | 5.0 | mΩ |
| Gate Threshold Voltage (VGS(TH)) | VDS=VGS,ID=250uA | 2.0 | -- | 4.0 | V |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, f=1.0MHZ | -- | 8000 | -- | pF |
| Reverse Transfer Capacitance (Crss) | -- | 950 | -- | pF | |
| Output Capacitance (Coss) | -- | 760 | -- | pF | |
| Gate Series Resistance (Rg) | f=1.0MHZ | -- | 2.0 | -- | Ω |
| Total Gate Charge (Qg) | VDD=50V, ID=80A, VGS=0 to 10V | -- | 120 | -- | nC |
| Gate-to-Source Charge (Qgs) | -- | 50 | -- | ||
| Gate-to-Drain (Miller) Charge (Qgd) | -- | 40 | -- | ||
| Resistive Switching Characteristics | |||||
| Turn-on Delay Time (td(ON)) | VDD=50V, ID=40A, VGS= 10V RG=10Ω | -- | 60 | -- | nS |
| Rise Time (trise) | -- | 132 | -- | ||
| Turn-Off Delay Time (td(OFF)) | -- | 170 | -- | ||
| Fall Time (tfall) | -- | 85 | -- | ||
| Source-Drain Body Diode Characteristics (TJ=25ºC, unless otherwise specified) | |||||
| Continuous Source Current (ISD) | Integral PN-diode in MOSFET | -- | -- | 160 | A |
| Pulsed Source Current (ISM) | -- | -- | 640 | A | |
| Diode Forward Voltage (VSD) | IS=25A, VGS=0V | -- | -- | 1.4 | V |
| Reverse recovery time (trr) | VGS=0V ,IF=80A, diF/dt=100A/μs | -- | 100 | -- | ns |
| Reverse recovery charge (Qrr) | -- | 335 | -- | uC | |
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-to-Case (RθJC) | -- | 0.45 | -- | ºC /W | |
| Thermal Resistance, Junction-to-Ambient (RθJA) | -- | 62 | -- | ºC /W | |
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