Surface Mount High Voltage Switching Diode JUXING BAV21W with Glass Passivated Chip Junction

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Product Description

Product Overview

High Voltage Switching Diode designed for surface-mounted applications. Featuring a glass-passivated chip junction and fast reverse recovery time, these diodes are ideal for automated placement. They are lead-free and comply with EU RoHS 2011/65/EU directives. Available in SOD-123 package.

Product Attributes

Brand: BAV
Certifications: EU RoHS 2011/65/EU
Material: Glass Passivated Chip Junction
Package: SOD-123

Technical Specifications

Parameter	Symbol	BAV19W	BAV20W	BAV21W	Units	Conditions
Maximum Repetitive Peak Reverse Voltage	VRRM	120	200	250	V
Maximum RMS voltage	VRMS	100	150	200	V
Continuous Forward Current	IF	250	250	250	mA
Non-reptitive Peak Forward Surge Current	IFSM	1	1	1	A	at 1s
Non-reptitive Peak Forward Surge Current	IFSM	3	3	3	A	at 1ms
Non-reptitive Peak Forward Surge Current	IFSM	9	9	9	A	at 1 us
Repetitive Peak Forward Current	IFRM	625	625	625	mA
Total Power Dissipation	Ptot	500	500	500	mW	at 25C
Operating and Storage Temperature Range	Tj, Tstg	-55 ~ +150	-55 ~ +150	-55 ~ +150	C
Reverse Voltage Breakdown	V(BR)R	120	200	250	V	at IR=100 A
Maximum Forward Voltage	VF	1.00	1.25	1.25	V	at IF=100 mA
Maximum Forward Voltage	VF	1.00	1.25	1.25	V	at IF=200 mA
Maximum DC Reverse Current	IR	0.1	0.1	0.1	A	at Ta=25C, Rated DC Blocking Voltage
Maximum DC Reverse Current	IR	100	100	100	A	at Ta=150C, Rated DC Blocking Voltage
Typical Junction Capacitance	Cj	5	5	5	pF	at VR=4V, f=1MHz
Maximum Reverse Recovery Time	trr	50	50	50	ns	Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A