Silicon Carbide Schottky Diode KNSCHA KN3D30120H Suitable for Solar Wind Inverters and Motor Drives
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Product Description
Product Overview
The KN3D30120H is a Silicon Carbide Schottky Diode designed for high-performance applications. It features zero forward/reverse recovery current, high blocking voltage, high frequency operation, and a positive temperature coefficient on Forward Voltage (VF). This diode offers temperature-independent switching behavior and high surge current capability, leading to higher system efficiency, parallel device convenience without thermal runaway, and suitability for higher temperature applications. It finds use in motor drives, solar/wind inverters, AC/DC converters, DC/DC converters, and uninterruptable power supplies.
Product Attributes
- Brand: KNSCHA
- Material: Silicon Carbide
Technical Specifications
| Parameter | Symbol | Test conditions | Value | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 1200 | V | |
| Continuous Forward Current | IF | TC=25C | 80 | A |
| TC=135C | 40 | |||
| TC=140C | 30 | |||
| Non repetitive Forward Surge Current | IFSM | TC = 25C, tp=10 ms, Half Sine Pulse | 230 | A |
| TC = 110C, tp=10 ms, Half Sine Pulse | 220 | |||
| Repetitive peak Forward Surge Current | IFRM | TC = 25C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse | 200 | A |
| TC = 110C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse | 190 | |||
| Total power dissipation | PD | TC=25C | 330 | W |
| TC=110C | 140 | |||
| Single Pulse Avalanche Energy | EAS | L=2mH, IAS=15A | 225 | mJ |
| Diode dv/dt ruggedness | dv/dt | VR = 0-1200V | 80 | V/ns |
| Operating Junction Temperature | TJ | -55 to 175 | C | |
| Storage Temperature | TSTG | -55 to 175 | C | |
| DC Blocking Voltage | VDC | TJ = 25C | 1200 | V |
| Forward Voltage | VF | IF = 30A, TJ =25C | 1.45 - 1.8 | V |
| IF = 30A, TJ = 125C | 1.75 | |||
| IF = 30A, TJ =175C | 1.95 | |||
| Reverse Current | IR | VR = 1200V, TJ = 25C | 15 - 200 | uA |
| VR = 1200V, TJ = 125C | 60 - 300 | |||
| VR = 1200V, TJ = 175C | 100 - 500 | |||
| Total Capacitive Charge | QC | VR = 800V, TJ = 25C | 155 | nC |
| Total Capacitance | C | VR = 1V, TJ = 25C, Freq = 1MHz | 1810 | pF |
| VR = 400V, TJ = 25C, Freq = 1MHz | 145 | |||
| VR = 800V, TJ = 25C, Freq = 1MHz | 103 | |||
| Thermal Resistance | Rth(j-c) | junction-case | 0.45 - 0.6 | 0C/W |
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Sellina