SOT23 NPN Transistor KTP MMBT6517 with High Breakdown Voltage and Low Collector Cutoff Current

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Product Description

MMBT6517 SOT-23 Plastic-Encapsulate Transistors

The MMBT6517 is an NPN transistor featuring high breakdown voltage and low collector-emitter saturation voltage. It is complementary to the MMBTA92 (PNP) transistor and is supplied in a SOT-23 package.

Product Attributes

Brand: KTP Semiconductor
Package: SOT-23
Marking: 497

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC= 100A, IE=0		300	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC= 1mA, IB=0		300	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE= 100A, IC=0		5	V
Collector Cut-off Current	ICBO	VCB=200V, IE=0		0.25	A
Emitter Cut-off Current	IEBO	VEB= 5V, IC=0		0.1	A
DC Current Gain	hFE(1)	VCE= 10V, IC= 1mA	60
DC Current Gain	hFE(2)	VCE= 10V, IC=10mA	100	200
DC Current Gain	hFE(3)	VCE=10V, IC=30mA	60
Collector-Emitter Saturation Voltage	VCE(sat)	IC=20mA, IB= 2mA		0.2	V
Base-Emitter Saturation Voltage	VBE(sat)	IC= 20mA, IB=2mA		0.9	V
Transition Frequency	fT	VCE= 20V, IC= 10mA, f=30MHz		50	MHz
Collector-Base Voltage	VCBO			300	V
Collector-Emitter Voltage	VCEO			300	V
Emitter-Base Voltage	VEBO			5	V
Collector Current -Continuous	IC			0.3	A
Collector Power Dissipation	PC			0.35	W
Thermal Resistance, Junction to Ambient	RJA			357	/W
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	+150
Collector Current-Peak	ICM			0.5	A