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NPN Transistor KTP MMBT5551 for High Voltage Amplifier and Gas Discharge Display Driver Applications

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Product Description

Product Overview

The 2N5551-MMBT5551 is an NPN general purpose amplifier designed for high voltage applications. It is suitable for use in high voltage amplifiers and gas discharge display drivers. The device is available in TO-92 (2N5551) and SOT-23 (MMBT5551) packages.

Product Attributes

  • Brand: KTP Semiconductor
  • Model: 2N5551-MMBT5551
  • Type: NPN General Purpose Amplifier
  • Suffix Options: -C (Center Collector), -Y (hFE 180~240)

Technical Specifications

Parameter2N5551 (TO-92)MMBT5551 (SOT-23)UnitsTest Condition
Collector-Emitter Voltage (VCEO)160VIC = 1.0mA, IB = 0
Collector-Base Voltage (VCBO)180VIC = 100A, IE = 0
Emitter-Base Voltage (VEBO)6.0VIE = 10uA, IC = 0
Collector current - Continuous (IC)600mATa = 25C
Junction and Storage Temperature (TJ, Tstg)-55 ~ +150CTa = 25C
Total Device Dissipation (PD)625350mWDevice mounted on FR-4 PCB 1.6" 1.6" 0.06." Ta = 25C
Derate above 25C5.02.8mW/CTa = 25C
Thermal Resistance, Junction to Ambient (RJA)200357C/WDevice mounted on FR-4 PCB 1.6" 1.6" 0.06." Ta = 25C
DC Current Gain (hFE)80 - 25080 - 250IC = 1.0mA, VCE = 5.0V (Min. 80), IC = 10mA, VCE = 5.0V (Min. 80), IC = 50mA, VCE = 5.0V (Min. 30)
Collector-Emitter Saturation Voltage (VCE(sat))0.15 - 0.20VIC = 10mA, IB = 1.0mA (0.15V), IC = 50mA, IB = 5.0mA (0.20V)
Base-Emitter On Voltage (VBE(sat))1.0VIC = 10mA, IB = 1.0mA (1.0V), IC = 50mA, IB = 5.0mA (1.0V)
Current Gain Bandwidth Product (fT)100 - 300MHzIC = 10mA, VCE = 10V, f = 100MHz
Output Capacitance (Cobo)6.0pFVCB = 10V, IE = 0, f = 1.0MHz
Input Capacitance (Cibo)20pFVBE = 0.5V, IC = 0, f = 1.0MHz
Small-Signal Current Gain (Hfe)50 - 25050 - 250IC = 1.0 mA, VCE = 10 V, f = 1.0kHz
Noise Figure (NF)8.0dBIC = 250 uA, VCE = 5.0 V, RS=1.0 k, f=10 Hz to 15.7 kHz

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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