IGBT module KTP IKW40N65H2-KTP 650V 40A featuring CoolWatt II trench FS technology for power switching
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Product Description
Product Overview
The 40N65H2 is a 650V, 40A IGBT discrete utilizing CoolWatt@II Trench-FS technology, offering high-speed soft switching. It features a low Vcesat, high junction temperature capability, and robust construction. This IGBT is ideal for applications requiring high switching frequencies, including Power, PV, Industrial welding, and PFC systems. It includes an integrated anti-parallel fast recovery diode.
Product Attributes
- Brand: KTP Semiconductor
- Part ID: 40N65H2
- Package: TO-247
Technical Specifications
| Symbol | Parameter | Condition | Value | Unit | |
| Maximum Rated Values | |||||
| VCES | Collector-emitter voltage | Tvj=25 | 650 | V | |
| IC | DC collector current | TC = 25 | 80 | A | |
| IC | DC collector current | TC =100 | 40 | A | |
| ICpuls | Pulse collector current | Tvj150 | 120 | A | |
| VRRM | Repetitive peak reverse voltage | Tvj=25 | 650 | V | |
| IF | Diode continuous forward current | TC = 25 | 80 | A | |
| IF | Diode continuous forward current | TC = 100 | 40 | A | |
| IFpuls | Diode pulse current | Tvj150 | 120 | A | |
| VGE | Gate-emitter voltage | Tvj=25 | 20 | V | |
| VGE | Gate-emitter voltage | Transienttp10uS,D0.01 | 30 | V | |
| Ptot | Power dissipation | TC = 25 | 333 | W | |
| Tvj | Operating junction temperature | -40~+175 | |||
| Tstg | Storage temperature | -50~ +150 | |||
| M | Mounting torque | M3 | 0.6 | Nm | |
| Thermal Characteristic | |||||
| RthJC-IGBT | IGBT thermal resistance junction-case | 0.45 | K/W | ||
| RthJC-FRD | FRD thermal resistance junction-case | 1.30 | K/W | ||
| RthJA | Thermal resistance junction-ambient | 40 | K/W | ||
| Electrical Characteristic | |||||
| V(BR)CES | Collector-emitter breakdown voltage | VGE = 0V, IC=0.25mA,Tvj=25 | 650 | V | |
| VCE(sat) | Collector-emitter saturation voltage | VGE=15V, IC=40A, Tvj=25 | 1.45 | V | |
| VCE(sat) | Collector-emitter saturation voltage | VGE=15V, IC=40A, Tvj=150 | 1.80 | V | |
| VGE(th) | Gate-emitter threshold voltage | VGE= VCE,IC=1.5mA,Tvj=25 | 5.50 | 6.50 | V |
| VF | Diode forward voltage | VGE= 0V,IF=40A, Tvj=25 | 1.60 | V | |
| VF | Diode forward voltage | VGE= 0V,IF=40A, Tvj=150 | 1.45 | V | |
| IGES | Zero collector voltage gate current | VGE=30V,VCE=0V | 200 | nA | |
| ICES | Zero gate voltage collector current | VCE =650V,VGE=0V, Tvj=25 | 0.25 | mA | |
| ICES | Zero gate voltage collector current | VCE =650V,VGE=0V, Tvj=150 | 0.50 | mA | |
| RGin | Integrated gate resistor | 0 | |||
| Cies | Input capacitance | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 | 6080 | pF | |
| Coes | Output capacitance | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 | 167 | pF | |
| Cres | Reverse transfer capacitance | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 | 97.3 | pF | |
| Qg | Gate charge | VGE=0/15V,Vcc=520V,IC=40A, Tvj=25 | 266 | nC | |
| Qge | Gate-emitter charge | VGE=0/15V,Vcc=520V,IC=40A, Tvj=25 | 39.9 | nC | |
| Qgc | Gate-collector charge | VGE=0/15V,Vcc=520V,IC=40A, Tvj=25 | 125 | nC | |
| VGE(pl) | Gate-emitter plateau voltage | IC =40A,VCE=520V, VGE=0/15V,Tvj=25 | 8.2 | V | |
| Dynamic CharacteristicWith inductive load | |||||
| IGBT Characteristic_25 | |||||
| Td(on) | Turn-on delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 108 | ns | |
| Tr | Rise time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 73.1 | ns | |
| Td(off) | Turn-off delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 587 | ns | |
| tf | Fall time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 37.4 | ns | |
| Eon | Turn-on energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 1.36 | mJ | |
| Eoff | Turn-off energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 1.23 | mJ | |
| Etotal | Total switch energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 2.59 | mJ | |
| IGBT Characteristic_150 | |||||
| Td(on) | Turn-on delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 93.1 | ns | |
| Tr | Rise time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 76.1 | ns | |
| Td(off) | Turn-off delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 649 | ns | |
| tf | Fall time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 36.6 | ns | |
| Eon | Turn-on energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 2.17 | mJ | |
| Eoff | Turn-off energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 1.41 | mJ | |
| Etotal | Total switch energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 3.58 | mJ | |
| Diode Characteristic_25 | |||||
| Erec | Reverse recovery energy | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 264 | uJ | |
| trr | Diode reverse recovery time | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 129 | nS | |
| Qrr | Diode reverse recovery charge | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 945 | nC | |
| Irrm | Diode peak reverse recovery current | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 12.8 | A | |
| dirr/dt | Diode peak rate of fall of reverse Recovery current during trr | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 116 | A/uS | |
| Diode Characteristic_150 | |||||
| Erec | Reverse recovery energy | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 819 | uJ | |
| trr | Diode reverse recovery time | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 282 | nS | |
| Qrr | Diode reverse recovery charge | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 3072 | nC | |
| Irrm | Diode peak reverse recovery current | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 25.6 | A | |
| dirr/dt | Diode peak rate of fall of reverse Recovery current during trr | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 192 | A/uS | |
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