SOT89 Package Power Amplification Transistor KUU SS8050 NPN Bipolar Suitable Electronic Applications

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Product Description

Product Overview

The SS8050 is an NPN bipolar transistor designed for power amplification. It comes in an SOT-89 package and is suitable for various electronic applications requiring amplification.

Product Attributes

Device Marking: SS8050=Y1

Technical Specifications

Characteristic	Symbol	Rating	Unit	Min	Type	Max
Absolute Maximum Ratings
Collector-Base Voltage	VCBO	40	V
Collector-Emitter Voltage	VCEO	25	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	1500	mA
Power Dissipation (Ta=25)	PC	500	mW
Thermal Resistance Junction-Ambient	RJA	250	/W
Junction and Storage Temperature	TJ,Tstg	-55 to +150
Electrical Characteristics (TA=25 unless otherwise noted)
Collector-Base Breakdown Voltage (IC=100uA, IE=0)	BVCBO	40	V	40
Collector-Emitter Breakdown Voltage (IC=1mA, IB=0)	BVCEO	25	V	25
Emitter-Base Breakdown Voltage (IE=100uA, IC=0)	BVEBO	5	V	5
Collector-Base Leakage Current (VCB=40V, IE=0)	ICBO		nA			100
Collector-Emitter Punch Through Current (VCE=20V, VBE=0)	ICES		nA			100
Emitter-Base Leakage Current (VEB=5V, IC=0)	IEBO		nA			100
DC Current Gain (VCE=1V, IC=100mA)	HFE1			85		400
DC Current Gain (VCE=1V, IC=800mA)	HFE2			40
Collector-Emitter Saturation Voltage (IC=800mA, IB=80mA)	VCE(sat)		V			0.5
Base-Emitter Saturation Voltage (IC=800mA, IB=80mA)	VBE(sat)		V			1.2
Transition Frequency (VCE=10V, IC=50mA)	fT	100	MHZ	100
Output Capacitance (VCB=10V, IE=0, f=1MHZ)	Cob		pF		13

Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	1.40	1.60	0.055	0.063
B	0.40	0.56	0.016	0.022
B1	0.35	0.48	0.014	0.019
C	0.35	0.44	0.014	0.017
D	4.40	4.60	0.173	0.181
D1	1.35	1.83	0.053	0.072
e	1.45	1.55	0.057	0.061
e1	2.95	3.05	0.116	0.120
E	2.29	2.60	0.090	0.102
H	3.75	4.25	0.148	0.167
L	0.80	1.20	0.031	0.047