Silicon Planar Zener Diode JUXING BZX55C15V Featuring Glass Case DO35 for Voltage Reference Circuits

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

Silicon Planar Zener Diodes. The Zener voltages are graded according to the international E24 standard. Other tolerances and higher Zener voltages are upon request.

Product Attributes

Brand: BZX55C
Material: Silicon Planar
Package: Glass Case DO-35
Origin: http://www.trr-jx.com
Version: 02

Technical Specifications

Type	Zener Voltage Range (V)	VZT at IZT (V)	IZT (mA)	ZZT Max. ()	ZZK at IZK Max. ()	IZK (mA)	IR at VR Max. (A)	Temp. Coefficient of Zener Voltage TKvz (%/K)
BZX55C0V8	0.73...0.83	0.8	5	8	50	1	-	-0.26...-0.23
BZX55C2V0	1.8...2.15	2	5	85	600	1	100	-0.09...-0.06
BZX55C2V2	2.08...2.33	2.2	5	85	600	1	75	-0.09...-0.06
BZX55C2V4	2.28...2.56	2.4	5	85	600	1	50	-0.09...-0.06
BZX55C2V7	2.5...2.9	2.7	5	85	600	1	10	-0.09...-0.06
BZX55C3V0	2.8...3.2	3	5	85	600	1	4	-0.08...-0.05
BZX55C3V3	3.1...3.5	3.3	5	85	600	1	2	-0.08...-0.05
BZX55C3V6	3.4...3.8	3.6	5	85	600	1	2	-0.08...-0.05
BZX55C3V9	3.7...4.1	3.9	5	85	600	1	2	-0.08...-0.05
BZX55C4V3	4...4.6	4.3	5	75	600	1	1	-0.06...-0.03
BZX55C4V7	4.4...5	4.7	5	60	600	1	0.5	-0.05...+0.02
BZX55C5V1	4.8...5.4	5.1	5	35	550	1	0.1	-0.02...+0.02
BZX55C5V6	5.2...6	5.6	5	25	450	1	0.1	-0.05...+0.05
BZX55C6V2	5.8...6.6	6.2	5	10	200	1	0.1	0.03...0.06
BZX55C6V8	6.4...7.2	6.8	5	8	150	1	0.1	0.03...0.07
BZX55C7V5	7...7.9	7.5	5	7	50	1	0.1	0.03...0.07
BZX55C8V2	7.7...8.7	8.2	5	7	50	1	0.1	0.03...0.08
BZX55C9V1	8.5...9.6	9.1	5	10	50	1	0.1	0.03...0.09
BZX55C10	9.4...10.6	10	5	15	70	1	0.1	0.03...0.1
BZX55C11	10.4...11.6	11	5	20	70	1	0.1	0.03...0.11
BZX55C12	11.4...12.7	12	5	20	90	1	0.1	0.03...0.11
BZX55C13	12.4...14.1	13	5	26	110	1	0.1	0.03...0.11
BZX55C15	13.8...15.6	15	5	30	110	1	0.1	0.03...0.11
BZX55C16	15.3...17.1	16	5	40	170	1	0.1	0.03...0.11
BZX55C18	16.8...19.1	18	5	50	170	1	0.1	0.03...0.11
BZX55C20	18.8...21.2	20	5	55	220	1	0.1	0.03...0.11
BZX55C22	20.8...23.3	22	5	55	220	1	0.1	0.04...0.12
BZX55C24	22.8...25.6	24	5	80	220	1	0.1	0.04...0.12
BZX55C27	25.1...28.9	27	5	80	220	1	0.1	0.04...0.12
BZX55C30	28...32	30	5	80	220	1	0.1	0.04...0.12
BZX55C33	31...35	33	5	80	220	1	0.1	0.04...0.12
BZX55C36	34...38	36	5	80	220	1	0.1	0.04...0.12
BZX55C39	37...41	39	2.5	90	500	0.5	0.1	0.04...0.12
BZX55C43	40...46	43	2.5	90	500	0.5	0.1	0.04...0.12
BZX55C47	44...50	47	2.5	110	600	0.5	0.1	0.04...0.12
BZX55C51	48...54	51	2.5	125	700	0.5	0.1	0.04...0.12
BZX55C56	52...60	56	2.5	135	700	0.5	0.1	0.04...0.12
BZX55C62	58...66	62	2.5	150	1000	0.5	0.1	0.04...0.12
BZX55C68	64...72	68	2.5	200	1000	0.5	0.1	0.04...0.12
BZX55C75	70...79	75	2.5	250	1000	0.5	0.1	0.04...0.12

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Power Dissipation	Ptot	500 ¹⁾	mW
Junction Temperature	Tj	175	C
Storage Temperature Range	Tstg	-55 to +175	C

Characteristics

Parameter	Symbol	Value	Unit
Thermal Resistance Junction to Ambient Air	RthA	0.3 ¹⁾	K/mW
Forward Voltage at IF = 100 mA	VF	1	V

¹⁾ Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.

²⁾ The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to the negative pole.