Trench MOS Barrier Schottky Diode JUXING MK4045TS Designed for On Board DC DC Converters and Adaptors
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Product Description
Product Overview
The Schottky Bypass Diode Module MK4045TS features Trench MOS Barrier Schottky technology for majority carrier conduction, resulting in ultra-low forward voltage drop and low leakage current. This design minimizes power loss and ensures high efficiency, making it ideal for high-frequency switched mode power supplies, adaptors, and on-board DC/DC converters. It offers high forward surge capacity and operates over a wide temperature range.
Product Attributes
- Brand: trr-jx
- Model: MK4045TS
- Technology: Trench MOS Barrier Schottky
- Conduction Type: Majority Carrier
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum repetitive peak reverse voltage | VRRM | 45 | V | |
| Maximum RMS voltage | VRMS | 32 | V | |
| Max. DC blocking voltage | VDC | 45 | V | |
| Operating junction temperature rangeAC model | Top | -55~150 | ||
| Junction temperature in DC forward current without reverse bias,t1h | TJ | -55~200 | ||
| Maximum average forward current (50% duty cycle, rectangular waveform) | IF(AV) | 40 | A | Tc=25 |
| Surge non repetitive forward current (8.3 ms single sine-wave superimposed on rated load per diode) | IFSM | 420 | A | |
| Maximum DC Reverse Current at Rated DC Bolcking Voltage @TJ=25 | IR | 50 | uA | |
| Maximum DC Reverse Current at Rated DC Bolcking Voltage @TJ=125 | IR | 50 | mA | |
| Maximum thermal resistance per dioxide | RJC | 1.0 | C/W |
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