High Speed Silicon Epitaxial Planar Diode KEC KDS226-RTK P with Low Forward Voltage and Capacitance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The KDS226 is a silicon epitaxial planar diode designed for ultra-high speed switching applications. It features a small SOT-23 package, low forward voltage (0.9V typ.), fast reverse recovery time (1.6ns typ.), and small total capacitance (0.9pF typ.).
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Epitaxial Planar
- Package: SOT-23
Technical Specifications
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | VF(1) | IF=1mA | - | 0.60 | - | V |
| Forward Voltage | VF(2) | IF=10mA | - | 0.72 | - | V |
| Forward Voltage | VF(3) | IF=100mA | - | 0.90 | 1.20 | V |
| Reverse Current | IR | VR=80V | - | - | 0.5 | A |
| Total Capacitance | CT | VR=0, f=1MHz | - | 0.9 | 3.0 | pF |
| Reverse Recovery Time | trr | IF=10mA | - | 1.6 | 4.0 | nS |
Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Maximum (Peak) Reverse Voltage | VRM | 85 | V |
| Reverse Voltage | VR | 80 | V |
| Maximum (Peak) Forward Current | IFM | 300 * | mA |
| Average Forward Current | IO | 100 * | mA |
| Surge Current (10ms) | IFSM | 2 * | A |
| Power Dissipation | PD | 150 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
Note: *Unit Rating. Total Rating=Unit Rating x 0.7
Dimensions (SOT-23)
| DIM | A | B | C | D | E | G | H | J | K | L | M | N | Q |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MILLIMETERS | 2.93 | 0.20 | 1.30+0.20/-0.15 | 0.40+0.15/-0.05 | 2.40+0.30/-0.20 | 1.90 | 0.95 | 0.13+0.10/-0.05 | 0.00 ~ 0.10 | 0.55 | 0.1 MAX | 0.20 MIN | 1.00+0.20/-0.10 |
Pin Configuration
- 1: CATHODE
- 2: ANODE
- 3: ANODE 1 / CATHODE 2
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Sellina