Silicon Epitaxial Planar Diode KEC KDS160E-RTL P Ultra High Speed Switching with Low Forward Voltage
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The KDS160E is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It features a small ESC package, low forward voltage, fast reverse recovery time, and small total capacitance. The suffix 'U' indicates qualification to AEC-Q101 standards, making it suitable for demanding automotive applications.
Product Attributes
- Type: Silicon Epitaxial Planar Diode
- Application: Ultra High Speed Switching
- AEC-Q101 Qualified (Suffix U)
Technical Specifications
| Model | Marking | Maximum (Peak) Reverse Voltage (VRM) | Reverse Voltage (VR) | Maximum (Peak) Forward Current (IFM) | Average Forward Current (IO) | Surge Current (IFSM) (10ms) | Power Dissipation (PD)* | Junction Temperature (Tj) | Storage Temperature Range (Tstg) |
|---|---|---|---|---|---|---|---|---|---|
| KDS160E | F U | 85 V | 80 V | 300 mA | 100 mA | 2 A | 150 mW | 150 | -55150 |
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | VF(1) | IF=1mA | - | 0.60 | - | V |
| Forward Voltage | VF(2) | IF=10mA | - | 0.72 | - | V |
| Forward Voltage | VF(3) | IF=100mA | - | 0.90 | 1.20 | V |
| Reverse Current | IR | VR=80V | - | - | 0.5 | A |
| Total Capacitance | CT | VR=0V, f=1MHz | - | 0.9 | 3.0 | pF |
| Reverse Recovery Time | trr | IF=10mA | - | 1.6 | 4.0 | nS |
* Mounted on a glass epoxy circuit board of 2020mm, pad dimension of 44mm.
| Dimension | Symbol | Millimeters |
|---|---|---|
| A | A | 1.60 0.10 |
| B | B | 1.20 0.10 |
| C | C | 0.80 0.10 |
| D | D | 0.30 0.05 |
| E | E | 0.60 0.10 |
| F | F | 0.13 0.05 |
| G | G | 0.20 0.10 |
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Sellina