P Channel MOSFET KEXIN AO3415 SOT 23 3 Low On Resistance Power Management Switching Device
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Delivery Time:
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Product Description
Product Overview
The AO3415 (KO3415) is a P-Channel MOSFET designed for various electronic applications. It features a low on-resistance and robust performance characteristics, making it suitable for power management and switching tasks.
Product Attributes
- SMD Type: SOT-23-3
- Brand: Kexin (implied by www.kexin.com.cn)
- Origin: China (implied by www.kexin.com.cn)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | TA=25°C | -5 | A | ||
| TA=70°C | -4 | |||||
| Pulsed Drain Current | IDM | t ≤ 10s | -30 | A | ||
| Power Dissipation | PD | TA=25°C | 1.5 | W | ||
| TA=70°C | 1 | |||||
| Thermal Resistance.Junction- to-Ambient | RthJA | Steady-State | 100 | °C/W | ||
| Thermal Resistance.Junction- to-Lead | RthJL | 52 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | °C | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDSS | ID=-250μA, VGS=0V | -20 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=±8V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250μA | -0.3 | -0.9 | V | |
| On state drain current | ID(ON) | VGS=-4.5V, VDS=-5V | -30 | A | ||
| VGS=-4.5V, ID=-4A | 43 | mΩ | ||||
| VGS=-4.5V, ID=-4A, TJ=125°C | 59 | mΩ | ||||
| VGS=-2.5V, ID=-4A | 55 | mΩ | ||||
| VGS=-1.8V, ID=-2A | 75 | mΩ | ||||
| VGS=-1.5V, ID=-1A | 100 | mΩ | ||||
| Forward Transconductance | gFS | VDS=-5V, ID=-4 A | 20 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=-10V, f=1MHz | 600 | 905 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=-10V, f=1MHz | 80 | 150 | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-10V, f=1MHz | 48 | 115 | pF | |
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 6 | 20 | Ω | |
| Total Gate Charge | Qg | VGS=-4.5V, VDS=-10V, ID=-4A | 7.4 | 11 | nC | |
| Gate Source Charge | Qgs | VGS=-4.5V, VDS=-10V, ID=-4A | 0.8 | 1.2 | nC | |
| Gate Drain Charge | Qg d | VGS=-4.5V, VDS=-10V, ID=-4A | 1.3 | 3.1 | nC | |
| Turn-On DelayTime | td(on) | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω | 13 | ns | ||
| Turn-On Rise Time | tr | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω | 9 | ns | ||
| Turn-Off DelayTime | td(off) | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω | 19 | ns | ||
| Turn-Off Fall Time | tf | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω | 29 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-4A, dI/dt=100A/μs | 20 | 32 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=-4A, dI/dt=100A/μs | 40 | 62 | nC | |
| Maximum Body-Diode Continuous Current | IS | -2 | A | |||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -1 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V, TJ=55±C | -5 | uA | ||
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