Schottky Barrier Diode KUU MBR10200DS with 140 Volt RMS Reverse Voltage and High Surge Current Rating

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Product Description

Product Overview

The MBR10200DS is a Schottky Barrier Diode featuring guard ring die construction for transient protection, low power loss, high efficiency, and high surge capability. It is designed for use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications. This product meets ROHS and Green Product requirements with full function reliability approved.

Product Attributes

Certifications: ROHS, Green Product

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Peak repetitive reverse voltage	VRRM	TA=25C	200	V
Working peak reverse voltage	VRWM	TA=25C	200	V
DC blocking voltage	VR	TA=25C	200	V
RMS reverse voltage	VR(RMS)	TA=25C	140	V
Average rectified output current	IO	5*2	10	A
Non-Repetitive peak forward surge current	IFSM	8.3ms half sine wave	100*2	A
Junction temperature	Tj		175	C
Storage temperature	Tstg		-55~+150	C
Thermal Resistance Junction to Ambient	RJA	TO-252	110	C/W
Thermal Resistance Junction to Ambient	RJA	TO-220F	60	C/W
Thermal Resistance Junction to Case	RJC	TO-252	6	C/W
Thermal Resistance Junction to Case	RJC	TO-220F		C/W
Reverse voltage	V(BR)	IR=0.1mA	200	V
Reverse current	IR	VR=200V	0.5	A
Reverse current	IR	VR=200V	5	A
Forward voltage	VF1	IF=3A, Tj=25	0.82	V
Forward voltage	VF2	IF=5A, Tj=25	0.85	V
Forward voltage	VF2	IF=5A, Tj=25	0.88	V
Forward voltage	VF2	IF=5A, Tj=125	0.74	V
Forward voltage	VF3	IF=10A, Tj=25	0.95	V
Typical total capacitance	Ctot	VR=5V,f=1MHz	50	pF