P Channel MOSFET KUU AO3415 with 20V Drain Source Voltage and 2kV Electrostatic Discharge Protection

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Product Description

Product Overview

The AO3415 is a SOT-23 P Channel MOS Field Effect Transistor designed for ESD protection. It offers a -20V Drain-Source Voltage and a continuous drain current of -5.6A at 25C. This device features integrated ESD protection up to 2.0 kV (HBM) and is suitable for various electronic applications requiring robust electrostatic discharge handling.

Product Attributes

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Origin: Not Specified
Material: Not Specified
Color: Not Specified
Certifications: ESD Protected Up to 2.0 kV (HBM)

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Breakdown Voltage	BVDSS	-20	-	-	V	(ID = -250uA,VGS=0V)
Gate Threshold Voltage	VGS(th)	-0.4	-0.62	-1	V	(ID = -250uA,VGS= VDS)
Zero Gate Voltage Drain Current	IDSS	-	-	1	uA	(VGS=0V, VDS= -20V)
Gate Body Leakage	IGSS	-	-	+15	uA	(VGS=+10V, VDS=0V)
Static Drain-Source On-State Resistance	RDS(ON)	-	31	41	m	(ID= -5A,VGS= -4.5V)
Static Drain-Source On-State Resistance	RDS(ON)	-	31	41	m	(ID= -4A,VGS= -2.5V)
Diode Forward Voltage Drop	VSD	-	-	-1.2	V	(ISD= -5A,VGS=0V)
Input Capacitance	CISS	-	1180	-	pF	(VGS=0V, VDS= -10V,f=1MHz)
Common Source Output Capacitance	COSS	-	125	-	pF	(VGS=0V, VDS= -10V,f=1MHz)
Reverse Transfer Capacitance	CRSS	-	88	-	pF	(VGS=0V, VDS= -10V,f=1MHz)
Total Gate Charge	Qg	-	11	-	nC	(VDS= -10V, ID= -4A, VGS= -4.5V)
Gate Source Charge	Qgs	-	2	-	nC	(VDS= -10V, ID= -4A, VGS= -4.5V)
Gate Drain Charge	Qgd	-	3	-	nC	(VDS= -10V, ID= -4A, VGS= -4.5V)
Turn-ON Delay Time	td(on)	-	14	-	ns	(VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V)
Turn-ON Rise Time	tr	-	10	-	ns	(VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V)
Turn-OFF Delay Time	td(off)	-	20	-	ns	(VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V)
Turn-OFF Fall Time	tf	-	30	-	ns	(VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V)