P channel MOSFET KIA Semicon Tech KIA35P10AD designed for voltage up to 100 volts and current 35 amps
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The KIA35P10A is a P-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications. This device meets RoHS and Green product requirements, with 100% EAS guaranteed and full functional reliability approved.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 35P10A
- Channel Type: P-CHANNEL
- Voltage Rating: -100V
- Current Rating: -35A
- Certifications: RoHS, Green device available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | BVDSS | VGS=0V, ID=-250A | -100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-100V,VGS=0V, TJ=25C | - | - | -50 | A |
| Gate-source leakage current | IGSS | VGS=+20V,VDS=0V | - | - | +100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | -1.2 | -1.8 | -2.5 | V |
| Static drain-source on- resistance | RDS(on) | VGS=-10V,ID=-10A | - | 42 | 55 | m |
| Static drain-source on- resistance | RDS(on) | VGS=-4.5V,ID=-8A | - | 46 | 60 | m |
| Forward transcend ductance | gFS | VDS=-10V, ID=-10A | - | 32 | - | S |
| Total gate charge | Qg | VDS=-80V, VGS=-10V ID =-14A | - | 92 | - | nC |
| Gate-source charge | Qgs | - | 17.5 | - | ||
| Gate-drain charge | Qg d | - | 14 | - | ||
| Turn-on delay time | td(on) | VDD=-50V, RG=3.3, VGS=-10V ID=-14A | - | 20.5 | - | ns |
| Rise time | tr | - | 32.2 | - | ||
| Turn-off delay time | td(off) | - | 123 | - | ||
| Fall time | tf | - | 63.7 | - | ||
| Input capacitance | Ciss | VGS=0V, VDS=-25V F=1.0MHZ | - | 4920 | - | pF |
| Output capacitance | Coss | - | 223 | - | ||
| Reverse transfer capacitance | Crss | - | 125 | - | ||
| Continuous source current | IS | VG=VD=0V,Force current | - | - | -35 | A |
| Diode forward voltage | VSD | VGS=0V,IS=-1A, TJ=25C | - | - | 1.2 | V |
| Reverse recovery time | trr | IF=-14A,dl/dt=100A/us , TJ=25C | - | 31.2 | - | nS |
| Reverse recovery charge | Qrr | - | 31.97 | - | nC |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Units |
|---|---|---|---|
| Drain-source voltage | VDS | -100 | V |
| Gate-source voltage | VGS | +20 | V |
| Continuous drain current VGS@-10V TC=25C | ID | -35 | A |
| Continuous drain current TC=100C | ID | -23 | A |
| Pulsed drain current | IDM | -100 | A |
| Single pulse avalanche energy | EAS | 345 | mJ |
| Avalanche current | IAS | 28 | A |
| Total power dissipation TA=25C | PD | 104 | W |
| Junction and storage temperature range | TJ ,TSTG | -55 to150 | C |
| Thermal resistance-junction to ambient | RJA | 62 | C/W |
| Thermal resistance-junction to case | RJC | 1.2 | C/W |
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