9A Current 1500V N Channel MOSFET KIA Semicon Tech KNM48150A with Low RDS ON and Fast Recovery Diode

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Product Description

Product Overview

This 9A, 1500V N-Channel MOSFET features a low RDS(ON) of 2.8 (typ.) at VGS=10V, low gate charge for minimized switching loss, and a fast recovery body diode. It is suitable for applications such as adaptors, chargers, and SMPS standby power.

Product Attributes

Brand: KIA
Part Number: KNM48150A
Package: TO-247

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Drain-source breakdown voltage	BVDSS	VGS=0V,ID=250uA	1500	-	-	V
Drain-source leakage current	IDSS	VDS=1500V, VGS=0V	-	-	1	uA
Drain-source leakage current	IDSS	VDS=1200V, TC=125C	-	-	500	uA
Gate-source forward leakage	IGSS	VGS=30V, VDS=0V	-	-	100	nA
Drain-source on-resistance	RDS(on)	VGS=10V,ID=5.4A	-	2.8	4
Gate threshold voltage	VGS(TH)	VDS=VGS,ID=250uA	2.5	-	4.5	V
Gate Resistance	Rg	f=1 MHz Gate DC Bias=0,Test signal level=20mVopen drain	-	1.17	-
Input capacitance	Ciss	VDS=25V,VGS=0V f=1MHz	-	3385	-	pF
Reverse transfer capacitance	Crss	VDS=25V,VGS=0V f=1MHz	-	54.6	-	pF
Output capacitance	Coss	VDS=25V,VGS=0V f=1MHz	-	176	-	pF
Total gate charge(10V)	Qg	VDD=750V, ID=9A VGS=0~10V	-	68	-	nC
Gate-source charge	Qgs	VDD=750V, ID=9A VGS=0~10V	-	21	-	nC
Gate-drain charge	Qgd	VDD=750V, ID=9A VGS=0~10V	-	25	-	nC
Turn-on delay time	td(on)	VDD=750V,VGS=10V, RG=25, ID=9A	-	65	-	ns
Rise time	tr	VDD=750V,VGS=10V, RG=25, ID=9A	-	186	-	ns
Turn-off delay time	td(off)	VDD=750V,VGS=10V, RG=25, ID=9A	-	82	-	ns
Fall time	tf	VDD=750V,VGS=10V, RG=25, ID=9A	-	114	-	ns
Continuous Source Current	ISD	Integral PN-diode in MOSFET	-	-	9	A
Pulsed Source Current	ISM	Integral PN-diode in MOSFET	-	-	36	A
Diode forward voltage	VSD	IS=9A,VGS=0V	-	-	1.3	V
Reverse Recovery Time	trr	VGS=0V,IF=9A, dIF/dt=100A/s	-	461	-	nS
Reverse Recovery Charge	Qrr	VGS=0V,IF=9A, dIF/dt=100A/s	-	3.36	-	nC

Parameter	Symbol	Unit	Rating
Continuous Drain Current	ID	A	9
Pulsed Drain Current	IDM	A	36
Single Pulse Avalanche Energy	EAS	mJ	450
Maximum Power Dissipation	PD	W	320
Derate above 25C		W/C	2.56
Soldering Temperature	TL	C	300
Storage Temperature Range	TJ&TSTG	C	-55 to 150
Thermal Resistance, Junction-to-Case	RJC	C/W	0.39
Thermal Resistance, Junction-to-Ambient	RJA	C/W	55