N Channel Enhancement Mode MOSFET JUXING JX3090K with 90 amp drain current and low RDS on resistance
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Product Description
JX3090K N-Channel Enhancement Mode MOSFET
The JX3090K is an N-Channel Enhancement Mode MOSFET featuring 30V MOSFET technology, low on-state resistance, and fast switching capabilities. It is designed for power switching and load switching applications, offering a Vgs of 20V.
Product Attributes
- Brand: JX
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Description | VDS (Max) | RDS(on) Typ. (@10V) | ID Max | RDS(on) Typ. (@4.5V) | Package |
| JX3090K | N-Channel Enhancement Mode MOSFET | 30V | 3.1m | 90A | 4.7m | TO-252 |
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Drain to Source Breakdown Voltage | V(BR)DSS | ID = 250A, VGS = 0V | 30 | V | ||
| Zero-Gate Voltage Drain Current | IDSS | VDS = 30V, VGS = 0V | 1 | A | ||
| Gate to Source Leakage Current | IGSS | VGS = 20V, VSS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1.0 | 1.6 | 2.5 | V |
| Static Drain to Source On-State Resistance | RDS(on) | ID = 30A, VGS = 10V | 3.1 | 3.6 | m | |
| Static Drain to Source On-State Resistance | RDS(on) | ID = 20A, VGS = 4.5V | 4.7 | 7.5 | m | |
| Input Capacitance | Ciss | VGS=0V, VDS=15V, Frequency=1.0MHz | 1700 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=15V, Frequency=1.0MHz | 320 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, Frequency=1.0MHz | 300 | pF | ||
| Turn-ON Delay Time | td(on) | VDS = 15V, ID = 30A, VGS = 10V, RG = 3 | 21 | ns | ||
| Rise Time | tr | VDS = 15V, ID = 30A, VGS = 10V, RG = 3 | 32 | ns | ||
| Turn-OFF Delay Time | td(off) | VDS = 15V, ID = 30A, VGS = 10V, RG = 3 | 60 | ns | ||
| Fall Time | tf | VDS = 15V, ID = 30A, VGS = 10V, RG = 3 | 34 | ns | ||
| Total Gate Charge | Qg | VDS = 15V, VGS = 10V, ID = 30A | 45 | nC | ||
| Gate to Source Charge | Qgs | VDS = 15V, VGS = 10V, ID = 30A | 3 | nC | ||
| Gate to Drain Charge | Qgd | VDS = 15V, VGS = 10V, ID = 30A | 15 | nC | ||
| Diode Forward Voltage | VFSD | IS = 30A, VGS = 0 | 0.4 | 1.2 | V |
| Parameter | Symbol | Maximum | Units |
| Drain to Source Voltage | VDSS | 30 | V |
| Gate to Source Voltage | VGSS | 20 | V |
| Drain Current (DC) | ID | 90 | A |
| Drain Current (Pulse) | IDP | 360 | A |
| Total Dissipation | PD | 65 | W |
| Avalanche Energy, Single Pulsed | EAS | 240 | mJ |
| Junction Temperature | Tj | 175 | |
| Storage Temperature | Tstg | -55 to +175 | |
| Junction to Case Thermal Resistance | RJC | 2.3 | /W |
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