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P Channel 30V MOSFET KUU KIRLML5203TRPBF Designed for Load Switches and DC DC Converter Applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The P-Channel 30V (D-S) MOSFET features ultra low on-resistance and is available in tape and reel. It is designed for applications such as load switches for portable devices and DC/DC converters.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
P-Channel 30V (D-S) MOSFET V(BR)DSS VGS = 0V, ID = -250A -30 V
RDS(on)MAX VGS = -10V, ID = -3.0A 98 m
RDS(on)MAX VGS = -4.5V, ID = -2.5A 165 m
ID -3.0 A
Gate-source threshold voltage VGS(th) VDS =VGS, ID = -250A -1 -2.5 V
Gate-source leakage IGSS VDS =0V, VGS = 20V 100 nA
Zero gate voltage drain current IDSS VDS = -24V, VGS =0V -1 A
Forward transconductance gfs VDS = -10V, ID = -3A 3.1 S
Diode forward voltage VSD IS=1A, VGS=0V -0.8 -1.2 V
Continuous Source-Drain Diode Current IS -1.3 A
Input capacitance Ciss VDS = -15V,VGS =0V, f=1MHz 510 pF
Output capacitance Coss 71 pF
Reverse transfer capacitance Crss 43 pF
Total gate charge Qg VDS = -15V,VGS = -10V, ID = -3A 9.5 nC
Gate-source charge Qgs 2.3 nC
Gate-drain charge Qgd 1.6 nC
Gate resistance Rg f=1MHz 6.5
Turn-on delay time td(on) VDS= -15V RL=6, ID -1A, VGEN= -10V,Rg=3 12 ns
Rise time tr 18 ns
Turn-off delay time td(off) 88 ns
Fall time tf 52 ns
Body Diode Reverse Recovery Time Trr IF= -3.0A, dI/dt=100A/s 17 ns
Body Diode Reverse Recovery Charge Qrr IF= -3.0A, dI/dt=100A/s 12 nC

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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