N Channel MOSFET KIA Semicon Tech KNF7650A 25A 500V for BLDC Motor Drivers Electric Welding and SMPS
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Product Description
Product Overview
The KIA SEMICONDUCTORS KNX7650A is a 25A, 500V N-CHANNEL MOSFET featuring an advanced planar process, low gate charge for minimized switching loss, and a rugged polysilicon gate structure. It is designed for applications such as BLDC motor drivers, electric welders, and high-efficiency SMPS.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Conditions | To-220F | TO-3P | Units |
| Absolute Maximum Ratings | |||||
| Drain-to-Source Voltage | VDSS | 500 | 500 | V | |
| Gate-to-Source Voltage | VGSS | ±30 | ±30 | V | |
| Continuous Drain Current | ID | TC=25 C | 25 | 25 | A |
| Continuous Drain Current @ Tc=100 C | ID | 16 | 16 | A | |
| Pulsed Drain Current | IDM | VGS=10V [2,4] | 100 | 100 | A |
| Single Pulse Avalanche Energy | EAS | 1800 | 1800 | mJ | |
| Peak Diode Recovery dv/dt | dv/dt | [3] | 5.0 | 5.0 | |
| Power Dissipation | PD | 105 | 290 | W | |
| Derating Factor above 25 C | 0.84 | 2.33 | W/ C | ||
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds | TL | 300 | 300 | C | |
| Maximum Temperature for Soldering Package Body for 10 seconds | TPAK | 260 | 260 | C | |
| Operating and Storage Temperature Range | TJ& TSTG | -55 to 150 | -55 to 150 | C | |
| Thermal Characteristics | |||||
| Thermal resistance, junction-ambient | RJA | 100 | - | C/W | |
| Thermal resistance, Junction-case | RJC | 1.19 | 0.43 | C/W | |
| Electrical Characteristics (TJ=25C, unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 500 | 500 | V |
| Drain-to-source Leakage Current | IDSS | VDS=500V ,VGS=0V | - | - | 1 A |
| Drain-to-source Leakage Current | IDSS | VDS=400V , VGS=0V TC=125C | - | - | 125 A |
| Gate-body leakage current | IGSS | VGS=30V,VDS=0V | - | - | +100 nA |
| Gate-body leakage current | IGSS | VGS=-30V,VDS=0V | - | - | -100 nA |
| On Characteristics | |||||
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=14A | - | 170 | 210 m |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 4.0 | V |
| Forward Transconductance | gfs | VDS=30V,ID=14A | - | 30 | S |
| Dynamic Characteristics | |||||
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | - | 4280 | pF |
| Output capacitance | Coss | - | 1400 | pF | |
| Reverse transfer capacitance | Crss | - | 185 | pF | |
| Turn-on delay time | td(on) | VDD=250V,ID=14A, VGS=10V,RG=10 | - | 24 | ns |
| Rise time | tr | - | 40 | ns | |
| Turn-off delay time | td(off) | - | 100 | ns | |
| Fall time | tf | - | 35 | ns | |
| Total gate charge | Qg | VDS=250V,ID=28A , VGS=0 to10V | - | 76 | nC |
| Gate-source charge | Qgs | - | 20 | nC | |
| Gate-drain charge | Qgd | - | 19 | nC | |
| Drain-source Diode Characteristics | |||||
| Drain-source diode forward voltage | VSD | VGS=0V,Is=18A | - | - | 1.5 V |
| Continuous drain-source current | ISD | [2] | - | - | 25 A |
| Pulsed drain-source current | ISM | [2] | - | - | 100 A |
| Reverse recovery time | trr | VGS=0V,IF=28A DlF/dt=100A/s | - | 530 | ns |
| Reverse recovery charge | Qrr | - | 4.5 | C | |
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