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Silicon epitaxial planar diode KEC KDS122-RTK/P ultra high speed switching with low forward voltage

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Product Description

Product Overview

The KDS122 is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It features a small USM package, low forward voltage (0.9V Typ.), fast reverse recovery time (1.6ns Typ.), and small total capacitance (0.9pF Typ.). The suffix 'U' indicates AEC-Q101 qualification, while the suffix 'A' denotes the USM(1) package.

Product Attributes

  • Brand: KEC
  • Type: Silicon Epitaxial Planar Diode
  • Application: Ultra High Speed Switching
  • Certifications: AEC-Q101 (Suffix U)

Technical Specifications

Characteristic Symbol Rating Unit Test Condition Min. Typ. Max.
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300 * mA
Average Forward Current IO 100 * mA
Surge Current (10ms) IFSM 2 * A
Power Dissipation PD 100 mW Ta=25
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to 150
Forward Voltage VF(1) V IF=1mA - 0.60 -
Forward Voltage VF(2) V IF=10mA - 0.72 -
Forward Voltage VF(3) V IF=100mA - 0.90 1.20
Reverse Current IR A VR=80V - - 0.5
Total Capacitance CT pF VR=0V, f=1MHz - 0.9 3.0
Reverse Recovery Time trr nS IF=10mA - 1.6 4.0

Package Dimensions (USM)

DIM A B C D E G H J K M N
MILLIMETERS 1.25 0.1 0.95 0.1 0.3 0.1 0.355 0.095 0.5 0.125 0.05 0.05 0.115 0.035 1.3 Typ. 2.275 Typ. 0.65 Typ. 2.1 0.1

Package Dimensions (USM(1))

DIM A B C D E G H J K L M N
MILLIMETERS 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 0.42 0.10 0.10 Min.

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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