Ultra high speed switching silicon epitaxial planar diode KEC KDS160-RTK/P with small USC package and low forward voltage
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The KDS160 is a silicon epitaxial planar diode designed for ultra-high speed switching applications. It features a small USC package, low forward voltage, fast reverse recovery time, and small total capacitance, making it suitable for demanding electronic circuits.
Product Attributes
- Brand: KDS
- Type: Silicon Epitaxial Planar Diode
- Application: Ultra High Speed Switching
Technical Specifications
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Maximum (Peak) Reverse Voltage | VRM | 85 | V |
| Reverse Voltage | VR | 80 | V |
| Maximum (Peak) Forward Current | IFM | 300 | mA |
| Average Forward Current | IO | 100 | mA |
| Surge Current (10ms) | IFSM | 2 | A |
| Power Dissipation | PD * | 200 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
Electrical Characteristics (Ta=25)
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | VF(1) | IF=1mA | - | 0.60 | - | V |
| Forward Voltage | VF(2) | IF=10mA | - | 0.72 | - | V |
| Forward Voltage | VF(3) | IF=100mA | - | 0.90 | 1.20 | V |
| Reverse Current | IR | VR=80V | - | - | 0.5 | A |
| Total Capacitance | CT | VR=0V, f=1MHz | - | 0.9 | 3.0 | pF |
| Reverse Recovery Time | trr | IF=10mA | - | 1.6 | 4.0 | nS |
* Mounted on a glass epoxy circuit board of 2020mm, pad dimension of 44mm.
Dimensions (USC Package)
| Dimension | Millimeters |
|---|---|
| A | 2.50 0.2 |
| B | 1.25 0.05 |
| C | 0.90 0.05 |
| D | 1.70 0.05 |
| E | 0.126 0.03 |
| F | 0 ~ 0.1 |
| G | 0.15 0.05 |
| H | 0.4 0.1 |
| J | 0.30 0.06 |
| K | 0.27 0.10 |
| L | 4~6 |
| M | 1.0 MAX |
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