High speed switching silicon diode KEC KDS184-RTK/HU with small SOT 23 package and AEC Q101 standard
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The KDS184 is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It features a small SOT-23 package, low forward voltage, fast reverse recovery time, and small total capacitance. The suffix U indicates qualification to AEC-Q101 standards.
Product Attributes
- Brand: SEMICONDUCTOR
- Model: KDS184
- Package: SOT-23
- Qualification: AEC-Q101 (Suffix U)
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Test Condition | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF(1) | V | IF=1mA | - | 0.60 | - | |
| Forward Voltage | VF(2) | V | IF=10mA | - | 0.72 | - | |
| Forward Voltage | VF(3) | V | IF=100mA | - | 0.90 | 1.20 | |
| Reverse Current | IR | A | VR=80V | - | - | 0.5 | |
| Total Capacitance | CT | pF | VR=0, f=1MHz | - | 0.9 | 3.0 | |
| Reverse Recovery Time | trr | nS | IF=10mA | - | 1.6 | 4.0 | |
| Maximum (Peak) Reverse Voltage | VRM | 85 | V | ||||
| Reverse Voltage | VR | 80 | V | ||||
| Maximum (Peak) Forward Current | IFM | 300 * | mA | ||||
| Average Forward Current | IO | 100 * | mA | ||||
| Surge Current (10ms) | IFSM | 2 * | A | ||||
| Power Dissipation | PD | 150 | mW | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature Range | Tstg | -55150 |
Note: *Unit Rating. Total Rating=Unit Rating x 1.5
Dimensions (SOT-23):
| DIM | MILLIMETERS | MIN | MAX |
|---|---|---|---|
| A | 2.93 | ||
| B | 0.20 | ||
| C | 1.30+0.20/-0.15 | ||
| D | 0.40+0.15/-0.05 | ||
| E | 2.40+0.30/-0.20 | ||
| G | 1.90 | ||
| H | 0.95 | ||
| J | 0.13+0.10/-0.05 | ||
| K | 0.00 ~ 0.10 | ||
| L | 0.55 | ||
| M | 0.20 | ||
| N | 1.00+0.20/-0.10 | ||
| P | 1.30 |
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