Ultra high speed switching silicon epitaxial planar diode KEC KDS187-RTK P with small SOT 23 package
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The KDS187 is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It features a small SOT-23 package, low forward voltage, fast reverse recovery time, and small total capacitance. The suffix U indicates qualification to AEC-Q101 standards.
Product Attributes
- Type: SILICON EPITAXIAL PLANAR DIODE
- Application: ULTRA HIGH SPEED SWITCHING APPLICATION
- Package: SOT-23
- Qualification: AEC-Q101 (Suffix U)
Technical Specifications
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | VF(1) | IF=1mA | - | 0.61 | - | V |
| Forward Voltage | VF(2) | IF=10mA | - | 0.74 | - | V |
| Forward Voltage | VF(3) | IF=100mA | - | 0.92 | 1.20 | V |
| Reverse Current | IR | VR=80V | - | - | 0.5 | A |
| Total Capacitance | CT | VR=0, f=1MHz | - | 2.2 | 4.0 | pF |
| Reverse Recovery Time | trr | IF=10mA | - | 1.6 | 4.0 | nS |
Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Maximum (Peak) Reverse Voltage | VRM | 85 | V |
| Reverse Voltage | VR | 80 | V |
| Maximum (Peak) Forward Current | IFM | 300 | mA |
| Average Forward Current | IO | 100 | mA |
| Surge Current (10ms) | IFSM | 2 | A |
| Power Dissipation | PD | 150 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
Dimensions (SOT-23)
| Dimension | Value (mm) |
|---|---|
| A | 2.93 |
| B | 0.20 |
| C | 1.30+0.20/-0.15 |
| D | 0.40+0.15/-0.05 |
| E | 2.40+0.30/-0.20 |
| G | 1.90 |
| H | 0.95 |
| J | 0.13+0.10/-0.05 |
| K | 0.00 ~ 0.10 |
| L | 0.55 |
| M | 0.1 MAX |
| N | 0.20 MIN |
| P | 1.00+0.20/-0.10 |
| Q | 1.30 MAX |
Pin Configuration (SOT-23)
- NC
- CATHODE
- ANODE
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Sellina